Method of manufacturing a semiconductor device

• US 7,375,782 B2
• Filed: 03/21/2005
• Issued: 05/20/2008
• Est. Priority Date: 02/16/1995
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Teramoto, Satoshi, Arai, Yasuyuki, Yamazaki, Shunpei
• Primary Examiner(s): Nelms; David
• Assistant Examiner(s): Vu; Phu
• Application Number:
  US11/084,122
• Publication Number:
  US 20050162578A1
• Time in Patent Office: 1,156 Days
• Field of Search: 349/114
• US Class Current: 349/114
• CPC Class Codes: H01L 21/02422 Non-crystalline insulating materials, e.g. glass, polymers
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02672 using crystallisation enhancing elements
• CPC Class Codes: H01L 21/02675 using laser beams
• CPC Class Codes: H01L 2221/68318 Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
• CPC Class Codes: H01L 2221/68359 used as a support during manufacture of interconnect decals or build up layers
• CPC Class Codes: H01L 2221/68363 used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 27/1277 using a crystallisation promoting species, e.g. local introduction of Ni catalyst
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: Y10S 438/928 Front and rear surface processing
• CPC Class Codes: Y10S 438/977 Thinning or removal of substrate

Abstract

A method of manufacturing a semiconductor device, comprises the steps of: forming a first insulating film on a first substrate; forming a second insulating film on the first insulating film; forming an amorphous silicon film on the second insulating film; holding a metal element that promotes the crystallization of silicon in contact with a surface of the amorphous silicon film; crystallizing the amorphous silicon film through a heat treatment to obtain a crystalline silicon film; forming a thin-film transistor using the crystalline silicon film; forming a sealing layer that seals the thin-film transistor; bonding a second substrate having a translucent property to the sealing layer; and removing the first insulating film to peel off the first substrate.

Claims

1. A liquid crystal display device comprising:

a pair of light transmitting substrates comprising a resin, each of the light transmitting substrates having a curved surface;

a pixel thin film transistor provided over one of the pair of light transmitting substrates and comprising a semiconductor film comprising a source region, a drain region, a channel formation region provided between the source region and the drain region and a gate electrode provided adjacent to the channel formation region with a gate insulating film therebetween;

an interlayer insulating film comprising an organic resin, and provided over the pixel thin film transistor; and

a pixel electrode electrically connected to the drain region, and provided over the interlayer insulating film,

wherein the pixel thin film transistor is bonded to another one of the pair of light transmitting substrates with a resin material, and

wherein the semiconductor film contains hydrogen atoms at a density of 1×

10²⁰ atoms cm<sup>−

3</sup> or less, and contains carbon and nitrogen atoms at a density of 5×

10¹⁸ atoms cm<sup>−

3</sup> or less, and contains oxygen atoms at a density of 5×

10¹⁹ atoms cm<sup>−

3</sup> or less.

11. A liquid crystal display device according to claim 1, wherein the pair of light transmitting substrates comprises a PET film.

18. A liquid crystal display device according to claim 1, wherein the pixel electrode comprises ITO.

2. A liquid crystal display device comprising:

a pair of light transmitting substrates comprising a resin, each of the light transmitting substrates having a flexibility;

a pixel thin film transistor provided over one of the pair of light transmitting substrates and comprising a semiconductor film comprising a source region, a drain region, a channel formation region provided between the source region and the drain region and a gate electrode provided adjacent to the channel formation region with a gate insulating film therebetween;

an interlayer insulating film comprising an organic resin, and provided over the pixel thin film transistor; and

a pixel electrode electrically connected to the drain region, and provided over the interlayer insulating film,

wherein the pixel thin film transistor is bonded to another one of the pair of light transmitting substrates with a resin material, and

wherein the semiconductor film contains hydrogen atoms at a density of 1×

10²⁰ atoms cm<sup>−

3</sup> or less, and contains carbon and nitrogen atoms at a density of 5×

10¹⁸ atoms cm<sup>−

3</sup> or less, and contains oxygen atoms at a density of 5×

10¹⁹ atoms cm<sup>−

3</sup> or less.

12. A liquid crystal display device according to claim 2, wherein the pair of light transmitting substrates comprises a PET film.

19. A liquid crystal display device according to claim 2, wherein the pixel electrode comprises ITO.

3. A liquid crystal display device comprising:

a pair of light transmitting substrates comprising a resin, each of the light transmitting substrates having a curved surface;

a pixel thin film transistor provided over one of the pair of light transmitting substrates and comprising a semiconductor film comprising a source region, a drain region, a channel formation region provided between the source region and the drain region and a gate electrode provided adjacent to the channel formation region with a gate insulating film therebetween;

an interlayer insulating film comprising an organic resin, and provided over the pixel thin film transistor; and

a pixel electrode comprising ITO electrically connected to the drain region, and provided over the interlayer insulating film,

wherein the pixel thin film transistor is bonded to another one of the pair of light transmitting substrates with a resin material, and

wherein the semiconductor film contains hydrogen atoms at a density of 1×

10²⁰ atoms cm<sup>−

3</sup> or less, and contains carbon and nitrogen atoms at a density of 5×

10¹⁸ atoms cm<sup>−

3</sup> or less, and contains oxygen atoms at a density of 5×

10¹⁹ atoms cm<sup>−

3</sup> or less.

13. A liquid crystal display device according to claim 3, wherein the pair of light transmitting substrates comprises a PET film.

4. A liquid crystal display device comprising:

a pair of light transmitting substrates comprising a resin, each of the light transmitting substrates having a flexibility;

a pixel thin film transistor provided over one of the pair of light transmitting substrates and comprising a semiconductor film comprising a source region, a drain region, a channel formation region provided between the source region and the drain region and a gate electrode provided adjacent to the channel formation region with a gate insulating film therebetween; and

an interlayer insulating film comprising an organic resin, and provided over the pixel thin film transistor,

wherein the pixel thin film transistor is bonded to another one of the pair of light transmitting substrates with a resin material, and

wherein the semiconductor film contains hydrogen atoms at a density of 1×

10²⁰ atoms cm<sup>−

3</sup> or less, and contains carbon and nitrogen atoms at a density of 5×

10¹⁸ atoms cm<sup>−

3</sup> or less, and contains oxygen atoms at a density of 5×

10¹⁹ atoms cm<sup>−

3</sup> or less.

14. A liquid crystal display device according to claim 4, wherein the pair of light transmitting substrates comprises a PET film.

5. An object comprising:

a front glass;

a pair of light transmitting substrates comprising a resin over the front glass, each of the light transmitting substrates having a curved surface;

a pixel thin film transistor provided over one of the pair of light transmitting substrates and comprising a semiconductor film comprising a source region, a drain region, a channel formation region provided between the source region and the drain region and a gate electrode provided adjacent to the channel formation region with a gate insulating film therebetween; and

an interlayer insulating film comprising an organic resin, and provided over the pixel thin film transistor,

wherein the pixel thin film transistor is bonded to another one of the pair of light transmitting substrates with a resin material, and

wherein the semiconductor film contains hydrogen atoms at a density of 1×

10²⁰ atoms cm<sup>−

3</sup> or less, and contains carbon and nitrogen atoms at a density of 5×

10¹⁸ atoms cm<sup>−

3</sup> or less, and contains oxygen atoms at a density of 5×

10¹⁹ atoms cm<sup>−

3</sup> or less.

15. An object according to claim 5, wherein the pair of light transmitting substrates comprises a PET film.

20. An object according to claim 5, wherein the object is selected from the group consisting of a vehicle and an airplane.

6. An object comprising:

a front glass;

a pair of light transmitting substrates comprising a resin over the front glass, each of the light transmitting substrates having a flexibility;

a pixel thin film transistor provided over one of the pair of light transmitting substrates and comprising a semiconductor film comprising a source region, a drain region, a channel formation region provided between the source region and the drain region and a gate electrode provided adjacent to the channel formation region with a gate insulating film therebetween; and

an interlayer insulating film comprising an organic resin, and provided over the pixel thin film transistor,

wherein the pixel thin film transistor is bonded to another one of the pair of light transmitting substrates with a resin material, and

wherein the semiconductor film contains hydrogen atoms at a density of 1×

10²⁰ atoms cm<sup>−

3</sup> or less, and contains carbon and nitrogen atoms at a density of 5×

10¹⁸ atoms cm<sup>−

3</sup> or less, and contains oxygen atoms at a density of 5×

10¹⁹ atoms cm<sup>−

3</sup> or less.

16. An object according to claim 6, wherein the pair of light transmitting substrates comprises a PET film.

21. An object according to claim 6, wherein the object is selected from the group consisting of a vehicle and an airplane.

7. An object comprising:

a substrate having a curved surface;

a first light transmitting substrate comprising resin having a flexibility attached on the substrate having a curved surface;

a thin film integrated circuit comprising a thin film transistor provided over the first light transmitting substrate;

an interlayer insulating film comprising an organic resin, and provided over the thin film integrated circuit; and

a second light transmitting substrate comprising resin having a flexibility bonded to the thin film integrated circuit with a resin material.

8. An object according to claim 7, wherein the object is a selected from the group consisting of a helmet, a vehicle and an airplane.

9. An object according to claim 8, wherein the substrate having a curved surface is a shield of the helmet.

10. An object according to claim 8, wherein the substrate having a curved surface is a front glass of the vehicle or the airplane.

17. An object according to claim 7, wherein the first and second light transmitting substrates comprises a PET film.