Electrode for dry etching a wafer

• US 20050178505A1
• Filed: 04/19/2002
• Published: 08/18/2005
• Est. Priority Date: 03/04/2002
• Status: Abandoned Application

• Current Assignee: Young Yul Kim
• Original Assignee: Young Yul Kim
• Inventors: Kim, Young Yul
• Application Number:
  US10/506,558
• Publication Number:
  US 20050178505A1
• Time in Patent Office: Days
• US Class Current: 156/345.470
• CPC Class Codes: H01J 37/32009 Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources plasma generation in general H05H1/24
• CPC Class Codes: H01J 37/32541 Shape

Abstract

Disclosed is an electrode for dry etching a wafer. The electrode includes a first electrode and a second electrode. The first electrode includes a first flat plate and a ring-shaped first protrusion corresponding to one surface of the edge of a wafer, and the second electrode includes a second flat plate and a ring-shaped second protrusion corresponding to the other surface of the edge of the wafer. The first plate and the second flat plate are the same dimension, and the first protrusion and the second protrusion are the same dimension.

Claims

1. An electrode for dry etching a wafer, said electrode comprising a first electrode and a second electrode for removing foreign materials from the edge of the wafer by plasma, said first electrode including a first flat plate and a ring-shaped first protrusion corresponding to one surface of the edge of a wafer, and said second electrode including a second flat plate and a ring-shaped second protrusion corresponding to the other surface of the edge of the wafer, wherein said first protrusion and said second protrusion are the same size.

2. The electrode for dry etching a wafer as set forth in claim 1, wherein an insulation layer is deposited on or an insulating material is attached to an inner area of the upper surface of the first electrode, which is inside of the first protrusion.