Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide

• US 20050277780A1
• Filed: 08/08/2005
• Published: 12/15/2005
• Est. Priority Date: 09/28/2000
• Status: Active Grant

• Current Assignee: President and Fellows of Harvard College (Harvard Corporation)
• Original Assignee: President and Fellows of Harvard College (Harvard Corporation)
• Inventors: Gordon, Roy G., Hausmann, Dennis, Becker, Jill, Suh, Seigi
• Granted Patent: US 7,507,848 B2
• Time in Patent Office: Days
• US Class Current: 556/57
• CPC Class Codes: C01B 13/34 by oxidation or hydrolysis of sprayed or atomised solutions
• CPC Class Codes: C01B 25/30 Alkali metal phosphates
• CPC Class Codes: C01B 25/36 Aluminium phosphates
• CPC Class Codes: C01B 33/126 Preparation of silica of undetermined type
• CPC Class Codes: C01B 33/20 Silicates persilicates C01B15/14 ; containing aluminium C01B33/26
• CPC Class Codes: C01B 33/26 Aluminium-containing silicates , i.e. silico-aluminates
• CPC Class Codes: C01G 25/02 Oxides
• CPC Class Codes: C01G 27/02 Oxides
• CPC Class Codes: C01G 35/00 Compounds of tantalum
• CPC Class Codes: C07F 9/091 with hydroxyalkyl compounds with further substituents on alkyl
• CPC Class Codes: C07F 9/11 with hydroxyalkyl compounds without further substituents on alkyl
• CPC Class Codes: C23C 16/30 Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
• CPC Class Codes: C23C 16/40 Oxides
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: C23C 16/402 Silicon dioxide
• CPC Class Codes: C23C 16/405 of refractory metals or yttrium
• CPC Class Codes: C23C 16/455 characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: C23C 16/45531 specially adapted for making ternary or higher compositions
• CPC Class Codes: C23C 16/45553 characterized by the use of precursors specially adapted for ALD
• CPC Class Codes: H01L 21/02112 : characterised by the material of the layer
• CPC Class Codes: H01L 21/02148 : the material containing hafnium, e.g. HfSiOx or HfSiON
• CPC Class Codes: H01L 21/02156 : the material containing at least one rare earth element, e.g. silicate of lanthanides, scandium or yttrium
• CPC Class Codes: H01L 21/02159 : the material containing zirconium, e.g. ZrSiOx
• CPC Class Codes: H01L 21/02164 : the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02178 : the material containing aluminium, e.g. Al2O3
• CPC Class Codes: H01L 21/02205 : the layer being characterised by the precursor material for deposition
• CPC Class Codes: H01L 21/02271 : deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/0228 : deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/3141 : Deposition using atomic layer deposition techniques [ALD]
• CPC Class Codes: H01L 21/31612 : on a silicon body
• CPC Class Codes: H01L 28/40 : Capacitors
• CPC Class Codes: H01L 29/0684 : characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
• CPC Class Codes: H01L 29/42364 : characterised by the insulating layer, e.g. thickness or uniformity H01L29/42324 and H01L29/4234 take precedence
• CPC Class Codes: H01L 29/517 : the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate H01L29/518 takes precedence

Abstract

Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage.

Claims

1. A reagent for use in a thin film deposition process, the reagent comprising Hf(NEtMe)₄.

2. The reagent of claim 1, wherein the process is chemical vapor deposition.

3. The reagent of claim 1, wherein the process is atomic layer deposition.

4. A liquid having the formula Hf(NEtMe)₄.

5. A compound having the formula Hf(NEtMe)₄.

6. A reagent for use in a thin film deposition process, the reagent comprising W(N^tBu)₂(NMeR)₂ where R is one of Me and Et.

7. The reagent of claim 6, wherein the process is chemical vapor deposition.

8. The reagent of claim 6, wherein the process is atomic layer deposition.

9. The reagent of claim 8, wherein the process includes exposing the reagent as a vapor to an exposed substrate.

10. A liquid having the formula W(N^tBu)₂(NMeR)₂ where R is one of Me and Et.

11. A compound having the formula W(N^tBu)₂(NMeR)₂ where R is one of Me and Et.