Interferometric modulators with thin film transistors

• US 20060001942A1
• Filed: 07/02/2004
• Published: 01/05/2006
• Est. Priority Date: 07/02/2004
• Status: Active Grant

• Current Assignee: Snaptrack Incorporated (Qualcomm, Inc.)
• Original Assignee: IDC, LLC
• Inventors: Zee, Stephen, Chui, Clarence
• Granted Patent: US 7,256,922 B2
• Time in Patent Office: Days
• US Class Current: 359/245
• CPC Class Codes: G02B 26/001 based on interference in an adjustable optical cavity interference filters G02B5/28; devices or arrangements using multiple reflections in spectrometry or monochromators G01J3/26
• CPC Class Codes: G02B 26/0841 the reflecting element being moved or deformed by electrostatic means

Abstract

A modulator has a transparent substrate with a first surface. At least one interferometric modulator element resides on the first surface. At least one thin film circuit component electrically connected to the element resides on the surface. When more than one interferometric element resides on the first surface, there is at least one thin film circuit component corresponding to each element residing on the first surface.

Claims

1. A modulator, comprising:

a transparent substrate having a first surface;

at least one interferometric modulator element on the first surface; and

at least one thin film semiconductor circuit component electrically connected to the element, wherein the thin film circuit component is located on the first surface of the substrate.

2. The modulator of claim 1, wherein the at least one interferometric modulator element further comprises an array of modulator elements.

3. The modulator of claim 1, wherein the thin film semiconductor circuit component further comprises one selected from the group comprised of:

a thin film transistor;

a low-temperature, polysilicon, top gate transistor;

a low-temperature, polysilicon, bottom gate transistor; and

a thin film diode.

4. The modulator of claim 1, wherein the at least one thin film circuit component further comprises at least one thin film circuit component corresponding to each element.

5. The modulator of claim 1, wherein the thin film circuit component is located directly adjacent to the element.

6. The modulator of claim 1, wherein the thin film component is located outside the modulator.

7. A method of manufacturing an interferometric modulator with thin film transistors, the method comprising:

providing a substrate;

manufacturing an interferometric modulator on the transparent substrate; and

manufacturing thin film circuit components on the transparent substrate.

8. The method of claim 7, manufacturing an interferometric modulator further comprising manufacturing a homogenous modulator.

9. The method of claim 7, manufacturing an interferometric modulator further comprising manufacturing a separable modulator.

10. The method of claim 7, manufacturing thin film circuit components further comprising manufacturing transistors using low-temperature polysilicon.

11. The method of claim 7, manufacturing thin film circuit components further comprising manufacturing thin film diodes.

12. The method of claim 10, manufacturing transistors using low-temperature polysilicon further comprising manufacturing top gate low-temperature polysilicon transistors.

13. The method of claim 10, manufacturing transistors using low-temperature polysilicon further comprising manufacturing bottom gate low-temperature polysilicon transistors.

14. The method of claim 7, wherein the manufacturing of an interferometric modulator and the manufacturing of the thin film circuit component are integrated such that at least two processes are shared.

15. The method of claim 7, wherein the manufacturing of the interferometric modulator is accomplished after the manufacture of the thin film circuit component.

16. The method of claim 7, wherein the manufacturing of the interferometric modulator is accomplished before the manufacture of the thin film circuit component.