Interferometric modulators with thin film transistors

• US 7,256,922 B2
• Filed: 07/02/2004
• Issued: 08/14/2007
• Est. Priority Date: 07/02/2004
• Status: Active Grant

• Current Assignee: Snaptrack Incorporated (Qualcomm, Inc.)
• Original Assignee: IDC, LLC
• Inventors: Zee, Stephen, Chui, Clarence
• Primary Examiner(s): Dang; Hung
• Assistant Examiner(s): TRA, TUYEN Q
• Application Number:
  US10/883,902
• Publication Number:
  US 20060001942A1
• Time in Patent Office: 1,138 Days
• Field of Search: 359/245, 359/247, 359/248, 359/237, 359/290, 359/291, 359/292, 359/293, 359/295, 359/222, 359/223, 359/224, 438 48- 53
• US Class Current: 359/245
• CPC Class Codes: G02B 26/001 based on interference in an adjustable optical cavity interference filters G02B5/28; devices or arrangements using multiple reflections in spectrometry or monochromators G01J3/26
• CPC Class Codes: G02B 26/0841 the reflecting element being moved or deformed by electrostatic means

Abstract

A modulator has a transparent substrate with a first surface. At least one interferometric modulator element resides on the first surface. At least one thin film circuit component electrically connected to the element resides on the surface. When more than one interferometric element resides on the first surface, there is at least one thin film circuit component corresponding to each element residing on the first surface.

Claims

1. A modulator, comprising:

a transparent substrate having a first surface;

an array of a plurality of interferometric modulator elements on the first surface; and

at least one thin film semiconductor circuit component electrically connected to at least one of the interferometric modulator elements and integrated within the array, wherein the thin film semiconductor circuit component is located on the first surface of the substrate.

2. The modulator of claim 1, wherein the thin film semiconductor circuit component further comprises one selected from the group comprised of:

a thin film transistor;

a low-temperature, polysilicon, top gate transistor;

a low-temperature, polysilicon, bottom gate transistor; and

a thin film diode.

3. The modulator of claim 1, wherein the at least one thin film circuit component comprises at least one thin film circuit component corresponding to each element.

4. The modulator of claim 1, wherein the thin film circuit component is located directly adjacent to the at least one interferometric modulator element.

5. A method of manufacturing an interferometric modulator with thin film transistors, the method comprising:

providing a transparent substrate;

manufacturing an interferometric modulator array on a first surface of the transparent substrate; and

manufacturing thin film circuit components on the first surface of the transparent substrate and integrated within the array.

6. The method of claim 5, manufacturing thin film circuit components further comprising manufacturing transistors using low-temperature polysilicon.

7. The method of claim 6, manufacturing transistors using low-temperature polysilicon further comprising manufacturing top gate low-temperature polysilicon transistors.

8. The method of claim 6, manufacturing transistors using low-temperature polysilicon further comprising manufacturing bottom gate low-temperature polysilicon transistors.

9. The method of claim 5, manufacturing thin film circuit components further comprising manufacturing thin film diodes.

10. The method of claim 5, wherein the manufacturing of an interferometric modulator and the manufacturing of the thin film circuit component are integrated such that at least two processes are shared.

11. The method of claim 5, wherein the manufacturing of the interferometric modulator is accomplished after the manufacture of the thin film circuit component.

12. The method of claim 5, wherein the manufacturing of the interferometric modulator is accomplished before the manufacture of the thin film circuit component.