Ferroelectric member element structure, method for manufacturing ferroelectric member element structure and method for manufacturing liquid jet head

• US 20060046319A1
• Filed: 08/26/2005
• Published: 03/02/2006
• Est. Priority Date: 08/31/2004
• Status: Active Grant

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Takeda, Kenichi
• Granted Patent: US 8,082,640 B2
• Time in Patent Office: Days
• US Class Current: 438/3
• CPC Class Codes: B41J 2/161 of film type, deformed by bending and disposed on a diaphragm
• CPC Class Codes: B41J 2/1628 dry etching
• CPC Class Codes: B41J 2/1629 wet etching
• CPC Class Codes: H10N 30/076 by vapour phase deposition
• CPC Class Codes: H10N 30/082 by etching, e.g. lithography
• CPC Class Codes: Y10T 29/42 Piezoelectric device making
• CPC Class Codes: Y10T 29/49155 Manufacturing circuit on or in base
• CPC Class Codes: Y10T 29/49401 Fluid pattern dispersing device making, e.g., ink jet

Abstract

A method for manufacturing a ferroelectric member element structure having a ferroelectric member film, and lower and upper electrodes between which the ferroelectric member film is sandwiched, the method comprising the steps of: forming a buffer layer having pattern-shaped oriented growth on a monocrystal substrate; performing oriented growth of the lower electrode layer on the buffer layer; performing oriented growth of ferroelectric member film to cover the buffer layer and the lower electrode layer; and removing a portion of the ferroelectric member film other than the portion having the oriented growth achieved along the pattern of the buffer layer, by means of an etching treatment.

Claims

1. A method for manufacturing a ferroelectric member element structure having a ferroelectric member film, and lower and upper electrodes between which said ferroelectric member film is sandwiched, the method comprising the steps of:

forming a buffer layer having pattern-shaped oriented growth on a monocrystal substrate;

performing oriented growth of said lower electrode layer on said buffer layer;

performing oriented growth of said ferroelectric member film to cover said buffer layer and said lower electrode layer; and

removing a portion of said ferroelectric member film other than the portion having the oriented growth achieved along the pattern of said buffer layer, by means of an etching treatment.

2. A method for manufacturing a ferroelectric member element structure according to claim 1, wherein the oriented growth is epitaxial growth.

3. A method for manufacturing a ferroelectric member element structure according to claim 1, further comprising a step for forming said upper electrode layer on said ferroelectric member element film between said step for performing the oriented growth of said ferroelectric member film and said step for removing effected by means of the etching treatment.

4. A method for manufacturing a ferroelectric member element structure according to claim 1, wherein the etching treatment is wet etching.

5. A method for manufacturing a ferroelectric member element structure according to claim 1, wherein the etching treatment is dry etching.

6. A method for manufacturing a ferroelectric member element structure according to claim 1, wherein said buffer layer having the pattern-shaped oriented growth is formed by forming a pattern-shaped orientation preventing layer on said monocrystal substrate and by performing oriented growth of said buffer layer on a portion of said monocrystal substrate other than the portion on which said orientation preventing layer is formed.

7. A method for manufacturing a ferroelectric member element structure according to claim 1, wherein said lower electrode is comprised of perovskite oxide conductive material.

8. A method for manufacturing a ferroelectric member element structure according to claim 1, wherein said lower electrode is comprised of oxide of (Sr_x,Ca_y,Ba_z)RuO₃ (but, x+y+z=1) system.

9. A method for manufacturing a ferroelectric member element structure according to claim 1, wherein said lower electrode is comprised of oxide of CNiO₃ system, where C is at least one kind of element selected among La, Pr, Nd, Sm and Eu.

10. A ferroelectric member element structure manufactured by a method for manufacturing a ferroelectric member element structure according to claim 1.

11. A method for manufacturing a ferroelectric member element structure having a ferroelectric member film, and lower and upper electrodes between which said ferroelectric member film is sandwiched, the method comprising the steps of:

forming a buffer layer having oriented growth on a monocrystal substrate;

forming said lower electrode layer having pattern-shaped oriented growth on said buffer layer;

performing oriented growth of said ferroelectric member film to cover said buffer layer and said lower electrode layer; and

removing a portion of said ferroelectric member film other than the portion having the oriented growth achieved along the pattern of said lower electrode layer, by means of an etching treatment.

12. A method for manufacturing a ferroelectric member element structure according to claim 11, wherein the oriented growth is epitaxial growth.

13. A method for manufacturing a ferroelectric member element structure according to claim 11, further comprising a step for forming said upper electrode layer on said ferroelectric member element film between said step for performing the oriented growth of said ferroelectric member film and said step for removing effected by means of the etching treatment.

14. A method for manufacturing a ferroelectric member element structure according to claim 11, wherein the etching treatment is wet etching.

15. A method for manufacturing a ferroelectric member element structure according to claim 11, wherein the etching treatment is dry etching.

16. A ferroelectric member element structure manufactured by a method for manufacturing a ferroelectric member element structure according to claim 11.

17. A method for manufacturing a liquid jet head comprising a liquid chamber communicated with a discharge port for discharging liquid, and a ferroelectric member element structure provided in correspondence to said liquid chamber and having a ferroelectric member film, and lower and upper electrodes between which said ferroelectric member film is sandwiched, the method comprising the steps of:

forming a buffer layer having pattern-shaped oriented growth on a monocrystal substrate;

performing oriented growth of said lower electrode layer on said buffer layer;

performing oriented growth of said ferroelectric member film to cover said buffer layer and said lower electrode layer; and

removing a portion of said ferroelectric member film other than the portion having the oriented growth achieved along the pattern of said buffer layer, by means of an etching treatment.

18. A method for manufacturing a liquid jet head comprising a liquid chamber communicated with a discharge port for discharging liquid, and a ferroelectric member element structure provided in correspondence to said liquid chamber and having a ferroelectric member film, and lower and upper electrodes between which said ferroelectric member film is sandwiched, the method comprising the steps of:

forming a buffer layer having oriented growth on a monocrystal substrate;

forming said lower electrode layer having pattern-shaped oriented growth on said buffer layer;

performing oriented growth of said ferroelectric member film to cover said buffer layer and said lower electrode layer; and

removing a portion of said ferroelectric member film other than the portion having the oriented growth achieved along the pattern of said lower electrode layer, by means of an etching treatment.