Method for manufacturing a ferroelectric member element structure

• US 8,082,640 B2
• Filed: 08/26/2005
• Issued: 12/27/2011
• Est. Priority Date: 08/31/2004
• Status: Expired due to Fees

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Takeda, Kenichi
• Primary Examiner(s): Tugbang, A. Dexter
• Application Number:
  US11/211,518
• Publication Number:
  US 20060046319A1
• Time in Patent Office: 2,314 Days
• Field of Search: 29/253.5, 298/901, 298/31, 298/46, 347/68, 347 70- 72, 361/321.1, 438/3, 438/21, 216/27, 310/328, 310/363
• US Class Current: 29/25.35
• CPC Class Codes: B41J 2/161 of film type, deformed by bending and disposed on a diaphragm
• CPC Class Codes: B41J 2/1628 dry etching
• CPC Class Codes: B41J 2/1629 wet etching
• CPC Class Codes: H10N 30/076 by vapour phase deposition
• CPC Class Codes: H10N 30/082 by etching, e.g. lithography
• CPC Class Codes: Y10T 29/42 Piezoelectric device making
• CPC Class Codes: Y10T 29/49155 Manufacturing circuit on or in base
• CPC Class Codes: Y10T 29/49401 Fluid pattern dispersing device making, e.g., ink jet

Abstract

A method for manufacturing a ferroelectric member element structure having a ferroelectric member film, and lower and upper electrodes between which the ferroelectric member film is sandwiched, includes the steps of: forming a buffer layer having pattern-shaped oriented growth on a monocrystal substrate; performing oriented growth of the lower electrode layer on the buffer layer; performing oriented growth of the ferroelectric member film to cover the buffer layer and the lower electrode layer; and removing a portion of the ferroelectric member film other than the portion having the oriented growth achieved along the pattern of the buffer layer, by means of an etching treatment.

Claims

1. A method for manufacturing a piezoelectric/electrostrictive element structure having a piezoelectric/electrostrictive film, and first and second electrodes between which said piezoelectric/electrostrictive film is sandwiched, the method comprising the steps of:

forming a buffer layer on a substrate at least having a monocrystal surface, said buffer layer including a first oriented grown portion;

forming said first electrode on said buffer layer, said first electrode including a second oriented grown portion corresponding to said first oriented grown portion;

forming a piezoelectric/electrostrictive layer on at least said first electrode, said piezoelectric/electrostrictive layer including a first piezoelectric/electrostrictive portion disposed over said second oriented grown portion, and a second piezoelectric/electrostrictive portion not disposed over said second oriented grown portion, said first piezoelectric/electrostrictive portion and said second piezoelectric/electrostrictive portion being distributed in a direction perpendicular to a thickness direction of said piezoelectric/electrostrictive layer, a degree of orientation of said first piezoelectric/electrostrictive portion being higher than a degree of orientation of said second piezoelectric/electrostrictive portion; and

removing said second piezoelectric/electrostrictive portion from said piezoelectric/electrostrictive layer so as to form said piezoelectric/electrostrictive film from said first piezoelectric/electrostrictive portion.

2. A method for manufacturing a piezoelectric/electrostrictive element structure according to claim 1, wherein said first piezoelectric/electrostrictive portion has epitaxial growth.

3. A method for manufacturing a piezoelectric/electrostrictive element structure according to claim 1, further comprising a step for forming said second electrode on said piezoelectric/electrostrictive layer between said step for forming said piezoelectric/electrostrictive layer and said step for removing said second piezoelectric/electrostrictive portion.

4. A method for manufacturing a piezoelectric/electrostrictive element structure according to claim 1, wherein said removing step comprises wet etching.

5. A method for manufacturing a piezoelectric/electrostrictive element structure according to claim 1, wherein said removing step comprises dry etching.

6. A method for manufacturing a piezoelectric/electrostrictive element structure according to claim 1, wherein said buffer layer is formed by forming a pattern-shaped orientation preventing layer on said monocrystal surface and by performing oriented growth of said buffer layer on a portion of said monocrystal surface other than the portion on which said orientation preventing layer is formed.

7. A method for manufacturing a piezoelectric/electrostrictive element structure according to claim 1, wherein said first electrode is comprised of perovskite oxide conductive material.

8. A method for manufacturing a piezoelectric/electrostrictive element structure according to claim 1, wherein said first electrode is comprised of an oxide of an (Sr_x, Ca_y, Ba_z)RuO₃ system, where x+y+z=1.

9. A method for manufacturing a piezoelectric/electrostrictive element structure according to claim 1, wherein said first electrode is comprised of an oxide of a CNiO₃ system, where C is at least one kind of element selected among La, Pr, Nd, Sm and Eu.

10. A method for manufacturing a piezoelectric/electrostrictive element structure having a piezoelectric/electrostrictive film, and first and second electrodes between which said piezoelectric/electrostrictive film is sandwiched, the method comprising the steps of:

forming a buffer layer having oriented growth on a substrate at least having a monocrystal surface;

forming said first electrode in a pattern having oriented growth on said buffer layer;

forming a piezoelectric/electrostrictive layer on at least said first electrode, said piezoelectric/electrostrictive layer including a first piezoelectric/electrostrictive portion disposed over the pattern of said first electrode, and a second piezoelectric/electrostrictive portion not disposed over the pattern of said first electrode, said first piezoelectric/electrostrictive portion and said second piezoelectric/electrostrictive portion being distributed in a direction perpendicular to a thickness direction of said piezoelectric/electrostrictive layer, a degree of orientation of said first piezoelectric/electrostrictive portion being higher than a degree of orientation of said second piezoelectric/electrostrictive portion; and

removing said second piezoelectric/electrostrictive portion from said piezoelectric/electrostrictive layer so as to form said piezoelectric/electrostrictive film from said first piezoelectric/electrostrictive portion.

11. A method for manufacturing a piezoelectric/electrostrictive element structure according to claim 10, wherein said first piezoelectric/electrostrictive portion corresponding to the pattern of said first electrode has epitaxial growth.

12. A method for manufacturing a piezoelectric/electrostrictive element structure according to claim 10, further comprising a step for forming said second electrode on said piezoelectric/electrostrictive layer between said step for forming said piezoelectric/electrostrictive layer and said step for removing said second piezoelectric/electrostrictive portion.

13. A method for manufacturing a piezoelectric/electrostrictive element structure according to claim 10, wherein said removing step comprises wet etching.

14. A method for manufacturing a piezoelectric/electrostrictive element structure according to claim 10, wherein said removing step comprises dry etching.

15. A method for manufacturing a liquid jet head comprising a liquid chamber communicating with a discharge port for discharging liquid, and a piezoelectric/electrostrictive element structure provided in correspondence to said liquid chamber and having a piezoelectric/electrostrictive film, and first and second electrodes between which said piezoelectric/electrostrictive film is sandwiched, the method comprising the steps of:

forming a buffer layer on a substrate at least having a monocrystal surface, said buffer layer including a first oriented grown portion;

forming said first electrode on said buffer layer, said first electrode including a second oriented grown portion corresponding to said first oriented grown portion;

forming a piezoelectric/electrostrictive layer on at least said first electrode, the piezoelectric/electrostrictive layer including a first piezoelectric/electrostrictive portion disposed over said second oriented grown portion, and a second piezoelectric/electrostrictive portion not disposed over said second oriented grown portion, said first piezoelectric/electrostrictive portion and said second piezoelectric/electrostrictive portion being distributed in a direction perpendicular to a thickness direction of said piezoelectric/electrostrictive layer, a degree of orientation of said first piezoelectric/electrostrictive portion being higher than a degree of orientation of said second piezoelectric/electrostrictive portion; and

removing said second piezoelectric/electrostrictive portion from said piezoelectric/electrostrictive layer so as to form said piezoelectric/electrostrictive film from said first piezoelectric/electrostrictive portion.

16. A method for manufacturing a liquid jet head comprising a liquid chamber communicating with a discharge port for discharging liquid, and a piezoelectric/electrostrictive element structure provided in correspondence to said liquid chamber and having a piezoelectric/electrostrictive film, and first and second electrodes between which said piezoelectric/electrostrictive film is sandwiched, the method comprising the steps of:

forming a buffer layer having oriented growth on a substrate at least having a monocrystal surface;

forming said first electrode in a pattern having oriented growth on said buffer layer;

forming a piezoelectric/electrostrictive layer on at least said first electrode, said piezoelectric/electrostrictive layer including a first piezoelectric/electrostrictive portion disposed over the pattern of said first electrode, and a second piezoelectric/electrostrictive portion not disposed over the pattern of said first electrode, said first piezoelectric/electrostrictive portion and said second piezoelectric/electrostrictive portion being distributed in a direction perpendicular to a thickness direction of said piezoelectric/electrostrictive layer, a degree of orientation of said first piezoelectric/electrostrictive portion being higher than a degree of orientation of said second piezoelectric/electrostrictive portion; and

removing said second piezoelectric/electrostrictive portion from said piezoelectric/electrostrictive layer so as to form said piezoelectric/electrostrictive film from said first piezoelectric/electrostrictive portion.

17. A method for manufacturing a piezoelectric/electrostrictive element structure having a piezoelectric/electrostrictive film, and first and second electrodes between which said piezoelectric/electrostrictive film is sandwiched, the method comprising the steps of:

forming a buffer layer on a substrate at least having a monocrystal surface, said buffer layer including a first oriented grown region;

forming said first electrode on said buffer layer, said first electrode including a second oriented grown region corresponding to said first oriented grown region;

forming a piezoelectric/electrostrictive layer on at least said first electrode, said piezoelectric/electrostrictive layer including a first piezoelectric/electrostrictive region disposed over said second oriented grown region, and a second piezoelectric/electrostrictive region not disposed over said second oriented grown portion, said first piezoelectric/electrostrictive region and said second piezoelectric/electrostrictive region being distributed in a direction perpendicular to a thickness direction of said piezoelectric/electrostrictive layer, a degree of orientation of said first piezoelectric/electrostrictive region being higher than a degree of orientation of said second piezoelectric/electrostrictive region; and

removing said second piezoelectric/electrostrictive region from said piezoelectric/electrostrictive layer so as to form said piezoelectric/electrostrictive film from said first piezoelectric/electrostrictive region.

18. A method for manufacturing a piezoelectric/electrostrictive element structure having a piezoelectric/electrostrictive film, and first and second electrodes between which said piezoelectric/electrostrictive film is sandwiched, the method comprising the steps of:

forming a buffer layer having oriented growth on a substrate at least having a monocrystal surface;

forming said first electrode in a pattern having oriented growth on said buffer layer;

forming a piezoelectric/electrostrictive layer on at least said first electrode, said piezoelectric/electrostrictive layer including a first piezoelectric/electrostrictive region disposed over the pattern of said first electrode, and a second piezoelectric/electrostrictive region not disposed over the pattern of said first electrode, said first piezoelectric/electrostrictive region and said second piezoelectric/electrostrictive region being distributed in a direction perpendicular to a thickness direction of said piezoelectric/electrostrictive layer, a degree of orientation of said first piezoelectric/electrostrictive region being higher than a degree of orientation of said second piezoelectric/electrostrictive region; and

removing said second piezoelectric/electrostrictive region from said piezoelectric/electrostrictive layer so as to form said piezoelectric/electrostrictive film from said first piezoelectric/electrostrictive region.

19. A method for manufacturing a liquid jet head comprising a liquid chamber communicating with a discharge port for discharging liquid, and a piezoelectric/electrostrictive element structure provided in correspondence to said liquid chamber and having a piezoelectric/electrostrictive film, and first and second electrodes between which said piezoelectric/electrostrictive film is sandwiched, the method comprising the steps of:

forming a buffer layer on a substrate at least having a monocrystal surface, said buffer layer including a first oriented grown region;

forming said first electrode on said buffer layer, said first electrode including a second oriented grown region corresponding to said first oriented grown region;

forming a piezoelectric/electrostrictive layer on at least said first electrode, the piezoelectric/electrostrictive layer including a first piezoelectric/electrostrictive region disposed over said second oriented grown region, and a second piezoelectric/electrostrictive region not disposed over said second oriented grown region, said first piezoelectric/electrostrictive region and said second piezoelectric/electrostrictive region being distributed in a direction perpendicular to a thickness direction of said piezoelectric/electrostrictive layer, a degree of orientation of said first piezoelectric/electrostrictive region being higher than a degree of orientation of said second piezoelectric/electrostrictive region; and

removing said second piezoelectric/electrostrictive region from said piezoelectric/electrostrictive layer so as to form said piezoelectric/electrostrictive film from said first piezoelectric/electrostrictive region.

20. A method for manufacturing a liquid jet head comprising a liquid chamber communicating with a discharge port for discharging liquid, and a piezoelectric/electrostrictive element structure provided in correspondence to said liquid chamber and having a piezoelectric/electrostrictive film, and first and second electrodes between which said piezoelectric/electrostrictive film is sandwiched, the method comprising the steps of:

forming a buffer layer having oriented growth on a substrate at least having a monocrystal surface;

forming said first electrode in a pattern having oriented growth on said buffer layer;

forming a piezoelectric/electrostrictive layer on at least said first electrode, said piezoelectric/electrostrictive layer including a first piezoelectric/electrostrictive region disposed over the pattern of said first electrode, and a second piezoelectric/electrostrictive region not disposed over the pattern of said first electrode, said first piezoelectric/electrostrictive region and said second piezoelectric/electrostrictive region being distributed in a direction perpendicular to a thickness direction of said piezoelectric/electrostrictive layer, a degree of orientation of said first piezoelectric/electrostrictive region being higher than a degree of orientation of said second piezoelectric/electrostrictive region; and

removing said second piezoelectric/electrostrictive region from said piezoelectric/electrostrictive layer so as to form said piezoelectric/electrostrictive film from said first piezoelectric/electrostrictive region.