Target and method of diffusion bonding target to backing plate

• US 20060065517A1
• Filed: 06/11/2003
• Published: 03/30/2006
• Est. Priority Date: 06/14/2002
• Status: Abandoned Application

• Current Assignee: Tosoh SMD, Inc. (Tosoh Corporation)
• Original Assignee: Tosoh SMD, Inc. (Tosoh Corporation)
• Inventors: Conard, Harry W, Ivanov, Eugene Y
• Application Number:
  US10/514,802
• Publication Number:
  US 20060065517A1
• Time in Patent Office: Days
• US Class Current: 204/192.120
• CPC Class Codes: B23K 20/021 Isostatic pressure welding
• CPC Class Codes: C23C 14/3407 Cathode assembly for sputtering apparatus, e.g. Target
• CPC Class Codes: C23C 14/3414 Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
• CPC Class Codes: H01J 37/3435 Target holders (includes backing plates and endblocks)

Abstract

Sputter target assemblies (10) and methods of making the sputter target assemblies in which the HIP processes conventionally used are minimized, or eliminated, while producing higher yields of sputter target assemblies in less time. In one instance the sputter target assemblies include a single, or multiple, layered interlayer (14, 16) between the target and backing plate (18) in order to achieve intermetallic diffusion bonds between adjacent layers during a single HIP process. A mechanical interlock between the target (12) and backing plate is also achieved preferably during a single HIP process. In another instance, the target and backing plate are welded directly together by electron beam welding, and the interlayer and HIP process are omitted. In either case, the process for making the sputter target assembly is shortened, rendering it less expensive and subject to less failures, while achieving assemblies having robust strength.

Claims

1. A sputter target assembly comprising:

a target comprised of a first material and having a mating surface;

an interlayer comprised of a second material;

a backing plate comprised of a third material and having a mating surface,

wherein the interlayer is intermetallically diffusion bonded with the mating surfaces of the target and backing plate during a HIP process.

2. The sputter target assembly of claim 1, wherein the first material is tantalum or an alloy thereof, the third material is copper or an alloy thereof, and the second material is a metal alloy diffusion bondable to the first and third materials.

3. The sputter target assembly of claim 2, wherein the second material is a metal alloy comprised of silver-copper-tin-zinc.

4. The sputter target assembly of claim 2, wherein a portion of the mating surfaces of the target and backing plate abut one another when diffusion bonding is achieved.

5. The sputter target assembly of claim 2, wherein the interlayer is comprised of a first interlayer and a second interlayer.

6. The sputter target assembly of claim 5, wherein the target is comprised of tantalum, the first interlayer is comprised of aluminum, the second interlayer is comprised of titanium, and the backing plate is comprised of copper or an alloy thereof.

7-11. -11. (canceled)

12. A method of making a sputter target assembly comprising:

a. providing a target comprised of a first material and having a mating surface;

b. providing an interlayer comprised of a second material adjacent the mating surface of the target;

c. providing a backing plate comprised of a third material and having a mating surface, the mating surface of the backing plate being adjacent the interlayer;

d. placing the adjacent target, interlayer, and backing plate assembly into a HIP can and subjecting the assembly to a HIP process;

e. forming intermetallic diffusion bonds between the adjacent layers, wherein the interlayer diffusion bonds to the target and the backing plate; and

f. removing the assembly from the HIP can.

13. The method of claim 12, wherein the first material is tantalum or an alloy thereof, the third material is copper or an alloy thereof, and the second material is a metal alloy diffusion bondable to the first and third materials.

14. The method of claim 13, wherein the second material is a metal alloy comprised of silver-copper-tin-zinc.

15. The method of claim 13, wherein the target and backing plate directly contact one another at a perimeter of the target and backing plate when diffusion bonding is achieved.

16. (canceled)

17. The method of claim 16, wherein the interlayer is comprised of a first interlayer and a second interlayer and wherein the target is comprised of tantalum, the first interlayer is comprised of aluminum, the second interlayer is comprised of titanium, and the backing plate is comprised of copper or an alloy thereof.

18-22. -22. (canceled)

23. A sputter target assembly comprising:

a target comprised of a first material and a mating surface;

an interlayer comprised of a second material;

a backing plate comprised of a third material and a mating surface,

wherein the interlayer is intermetallically diffusion bonded with the mating surfaces of the target and backing plate and the target and backing plate are mechanically interlocked during a HIP process.

24. The sputter target assembly of claim 23, wherein one of the target and backing plate further comprises a central stud received by a corresponding recess on the other of the target and backing plate, the central stud passing through a hole provided in the interlayer.

25. The sputter target assembly of claim 24, wherein the recess forms a negative angle that is filled with material from among the first, second and third materials during the HIP process to achieve one of the mechanical interlocks.

26. The sputter target assembly of claim 25, wherein the target further comprises a multi-level mating surface and the backing plate further comprises a multi-level mating surface corresponding to the mating surface of the target.

27. The sputter target assembly of claim 26, wherein an outer perimeter of one of the target and backing plate forms a negative angle on each of the multi-levels thereof, which negative angles are filled with the materials during the HIP process to achieve another mechanical interlock.

28. The sputter target assembly of claim 24, wherein the first material is tantalum or an alloy thereof, the third material is copper or an alloy thereof, and the second material is a metal alloy diffusion bondable to the first and third materials.

29. The sputter target assembly of claim 28, wherein the second material is a metal alloy comprised of silver-copper-tin-zinc.

31. The sputter target assembly of claim 23, wherein the interlayer is comprised of a first interlayer and a second interlayer, wherein the target is tantalum, the first interlayer is aluminum, the second interlayer is titanium, and the backing plate is copper, or an alloy thereof.

30. (canceled)

32-36. -36. (canceled)

37. A method of making a sputter target assembly comprising:

a. providing a target comprised of a first material and having a mating surface;

b. providing an interlayer comprised of a second material adjacent the mating surface of the target;

c. providing a backing plate comprised of a third material and having a mating surface, the mating surface of the backing plate being adjacent the interlayer;

d. placing the adjacent target, interlayer, and backing plate assembly into a HIP can and subjecting the assembly to a HIP process;

e. forming intermetallic diffusion bonds between the adjacent layers;

f. forming a mechanical interlock between the target and backing plate, wherein the interlayer diffusion bonds to the target and the backing plate; and

g. removing the assembly from the HIP can.

38. The method of claim 37, further comprising providing one of the target and backing plate further with a central stud received by a corresponding recess on the other of the target and backing plate, wherein during formation of said diffusion bonds the central stud passes through a hole provided in the interlayer.

39. The method of claim 38, wherein the recess forms a negative angle that is filled with materials from among the first, second and third materials to achieve one of the mechanical interlocks during the HIP process.

40-58. -58. (canceled)