Semiconductor device and method of fabricating the same
First Claim
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1. A semiconductor device, comprising:
- a semiconductor substrate including a first layer of a first conductivity type;
a second layer of a second conductivity type formed in a surface region of the first layer;
a third layer of a first conductivity type selectively formed in a surface region of the second layer;
a trench having a bottom surface and a side surface, and having a depth extending from a top surface of the third layer into the first layer;
a gate dielectric film formed on the bottom surface and the side surface dielectric particles buried in a bottom portion of the trench, and being in contact with the gate dielectric film; and
a gate electrode buried in another portion of the trench, being in contact with the gate dielectric film and the dielectric particles, and extending from a level of the top surface of the third layer to a boundary between the gate electrode and the dielectric particles, and extending beyond a level of boundary between the first layer and the second layer.
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Abstract
An n channel type power MOS field effect transistor has silica particles buried in a bottom portion of a trench and a gate electrode buried in another portion of the trench. The gate electrode is in contact with the silica particles. A gap of the silica particles is not filled with the gate electrode.
10 Citations
20 Claims
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1. A semiconductor device, comprising:
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a semiconductor substrate including a first layer of a first conductivity type;
a second layer of a second conductivity type formed in a surface region of the first layer;
a third layer of a first conductivity type selectively formed in a surface region of the second layer;
a trench having a bottom surface and a side surface, and having a depth extending from a top surface of the third layer into the first layer;
a gate dielectric film formed on the bottom surface and the side surface dielectric particles buried in a bottom portion of the trench, and being in contact with the gate dielectric film; and
a gate electrode buried in another portion of the trench, being in contact with the gate dielectric film and the dielectric particles, and extending from a level of the top surface of the third layer to a boundary between the gate electrode and the dielectric particles, and extending beyond a level of boundary between the first layer and the second layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device, comprising:
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a semiconductor substrate of a first conductivity type;
a trench having a bottom surface and a side surface;
a dielectric film formed on the bottom surface and the side surface;
dielectric particles buried in a bottom portion of the trench, and being in contact with the dielectric film; and
a dielectric layer buried in another portion of the trench, being in contact with the dielectric film and the dielectric particles, and extending from a level of the top surface of the semiconductor substrate. - View Dependent Claims (10, 11, 12, 13, 14)
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15. A method of fabricating a semiconductor device, comprising:
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forming a first semiconductor layer of a first conductivity type in a semiconductor substrate;
forming a second semiconductor layer of a second conductivity type selectively in a surface region of the first semiconductor layer;
forming a trench having a bottom surface and a side surface, and a depth extending from a top surface of the second layer into the semiconductor substrate;
forming a gate dielectric film formed on the bottom surface and the side surface of the trench;
applying a solution of dielectric particles on the gate dielectric film and filling the trench with the solution;
removing an excess portion of the dielectric particles so that remaining portions of the dielectric particles in a bottom portion of the trench, are positioned under a level of boundary between the first semiconductor layer and the semiconductor substrate; and
filling the trench with a material of a gate electrode on the buried dielectric particles. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification