Method of forming schottky diode with charge balance structure
First Claim
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1. A method for forming a Schottky diode having a semiconductor region, the method comprising:
- forming a plurality of charge control electrodes in the semiconductor region so as to influence an electric field in the semiconductor region, wherein at least two of the charge control electrodes are adapted to be biased differently from one another; and
overlaying the semiconductor region with a metal layer to thereby form a Schottky barrier therebetween.
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Abstract
a Schottky diode having a semiconductor region is formed as follows. A plurality of charge control electrodes are formed in the semiconductor region so as to influence an electric field in the semiconductor region, wherein at least two of the charge control electrodes are adapted to be biased differently from one another. The semiconductor region is overlaid with a metal layer to thereby form a Schottky barrier therebetween.
57 Citations
22 Claims
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1. A method for forming a Schottky diode having a semiconductor region, the method comprising:
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forming a plurality of charge control electrodes in the semiconductor region so as to influence an electric field in the semiconductor region, wherein at least two of the charge control electrodes are adapted to be biased differently from one another; and
overlaying the semiconductor region with a metal layer to thereby form a Schottky barrier therebetween. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of forming a Schottky diode, comprising:
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forming a first trench extending in a semiconductor region; and
forming at least one diode in the first trench; and
overlaying the semiconductor region with a metal layer to thereby form a Schottky barrier therebetween. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method of forming a Schottky diode, comprising:
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forming a plurality of laterally spaced trenches in a semiconductor region, each trench extending through at least a portion of the semiconductor region;
forming a plurality of diodes in each of the plurality of trenches; and
overlaying the semiconductor region with a metal layer so as to form a Schottky barrier therebetween. - View Dependent Claims (19, 20, 21, 22)
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Specification