Method of forming schottky diode with charge balance structure
First Claim
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1. A method for forming a Schottky diode having a semiconductor region, the method comprising:
- forming a plurality of charge control electrodes in the semiconductor region, wherein at least two of the charge control electrodes are adapted to be biased differently from one another; and
overlaying the semiconductor region with a metal layer to thereby form a Schottky barrier therebetween, the metal layer being insulated from at least one of the plurality of charge control electrodes, wherein the plurality of charge control electrodes are below the Schottky barrier so as to influence an electric field in the semiconductor region to improve a breakdown voltage of the Schottky diode.
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Abstract
a Schottky diode having a semiconductor region is formed as follows. A plurality of charge control electrodes are formed in the semiconductor region so as to influence an electric field in the semiconductor region, wherein at least two of the charge control electrodes are adapted to be biased differently from one another. The semiconductor region is overlaid with a metal layer to thereby form a Schottky barrier therebetween.
363 Citations
22 Claims
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1. A method for forming a Schottky diode having a semiconductor region, the method comprising:
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forming a plurality of charge control electrodes in the semiconductor region, wherein at least two of the charge control electrodes are adapted to be biased differently from one another; and overlaying the semiconductor region with a metal layer to thereby form a Schottky barrier therebetween, the metal layer being insulated from at least one of the plurality of charge control electrodes, wherein the plurality of charge control electrodes are below the Schottky barrier so as to influence an electric field in the semiconductor region to improve a breakdown voltage of the Schottky diode. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of forming a Schottky diode, comprising:
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forming a first trench extending in a semiconductor region; and forming at least one diode in the first trench; and overlaying the semiconductor region with a metal layer to thereby form a Schottky barrier therebetween, the metal layer also extending over the first trench, wherein no current flows through the first trench when the Schottky diode is in a conducting state, and wherein the at least one diode influences an electric field in the semiconductor region to thereby increase a blocking voltage of the Schottky diode. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method of forming a Schottky diode, comprising:
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forming a plurality of laterally spaced trenches in a semiconductor region, each trench extending through at least a portion of the semiconductor region; forming a plurality of diodes in each of the plurality of trenches; and overlaying the semiconductor region with a metal layer so as to form a Schottky barrier therebetween, the metal layer extending over the plurality of laterally spaced trenches, wherein no current flows through the plurality of laterally spaced trenches when the Schottky diode is in a conducting state, and wherein the plurality of diodes influence an electric field in the semiconductor region to thereby increase a blocking voltage of the Schottky diode. - View Dependent Claims (19, 20, 21, 22)
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Specification