Interconnected high speed electron tunneling devices

• US 20070029544A1
• Filed: 10/11/2006
• Published: 02/08/2007
• Est. Priority Date: 05/21/2001
• Status: Abandoned Application

• Current Assignee: The Board of Regents of the University of Colorado (University of Colorado System)
• Original Assignee: The Board of Regents of the University of Colorado (University of Colorado System)
• Inventors: Moddel, Garret, Estes, Michael
• Application Number:
  US11/546,872
• Publication Number:
  US 20070029544A1
• Time in Patent Office: Days
• US Class Current: 257/25
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G02B 2006/12123 Diode
• CPC Class Codes: G02B 2006/1213 comprising photonic band-gap structures or photonic lattices
• CPC Class Codes: G02B 2006/12142 Modulator
• CPC Class Codes: G02B 6/12004 Combinations of two or more optical elements
• CPC Class Codes: G02B 6/1226 involving surface plasmon interaction
• CPC Class Codes: G02B 6/34 utilising prism or grating G02B6/293 takes precedence
• CPC Class Codes: G02B 6/4201 Packages, e.g. shape, construction, internal or external details
• CPC Class Codes: G02B 6/4279 Radio frequency signal propagation aspects of the electrical connection, high frequency adaptations
• CPC Class Codes: G02B 6/4292 the light guide being disconnectable from the opto-electronic element, e.g. mutually self aligning arrangements
• CPC Class Codes: G02B 6/43 Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
• CPC Class Codes: H01L 2225/06513 Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06534 Optical coupling
• CPC Class Codes: H01L 23/48 Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
• CPC Class Codes: H01L 25/0657 Stacked arrangements of devices
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/3011 Impedance
• CPC Class Codes: H01L 31/035236 Superlattices; Multiple quantum well structures
• CPC Class Codes: H01L 31/06 : characterised by potential barriers
• CPC Class Codes: H01L 31/101 : Devices sensitive to infrared, visible or ultraviolet radiation
• CPC Class Codes: H10N 70/00 : Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching integrated devices or assemblies of multiple devices H10N79/00
• CPC Class Codes: Y02E 10/50 : Photovoltaic [PV] energy

Abstract

An integrated circuit chip includes a formation of integrated layers configured to define at least one integrated electronic component. The integrated layers further define an integrated electron tunneling device, which includes first and second non-insulating layers spaced apart from one another such that a given voltage can be provided thereacross. The integrated electron tunneling device further includes an arrangement disposed between the first and second non-insulating layers and serving as a transport of electrons between and to the first and second non-insulating layers. The arrangement includes at least a first layer configured such that the transport of electrons includes, at least in part, transport by means of tunneling. The integrated electron tunneling device further includes an antenna structure connected with the first and second non-insulating layers, and the integrated electron tunneling device is electrically connected with the integrated electronic component.

Claims

1. An optoelectronic device, comprising:

a formation of integrated layers, said integrated layers being configured so as to define at least one integrated electronic component; and

an electron tunneling device that is configured for electrical communication with said integrated electrical component, said electron tunneling device including

first and second non-insulating layers in a spaced apart, confronting relationship with one another so that a voltage difference can be supported therebetween,

an arrangement supported between the first and second non-insulating layers including at least one layer for producing electron tunneling between and to said first and second non-insulating layers, and

an antenna structure that is formed in electrical communication with said first and second non-insulating layers as part of said tunneling device for providing an external communication with the electron tunneling device.

2. The device of claim 1 wherein said antenna is further configured to perform said external communication using an optical radiation.

3. The device of claim 2 including an optical waveguide for carrying said optical radiation and said antenna is in optical communication with said optical waveguide.

4. The device of claim 3 wherein said optical waveguide carries a clock signal for use by said integrated electronic component.

5. The device of claim 4 wherein said optical waveguide is configured for receiving said clock signal from an external source as part of an overall broadcast of the clock signal.

6. The device of claim 2 wherein said antenna receives said optical radiation from an external source and said tunneling device is configured for interacting with the integrated electronic component responsive to said optical radiation, based on said electrical communication.

7. The device of claim 6 wherein said optical radiation includes a clock signal and said tunneling device is configured for communicating the clock signal to the integrated electronic component.

8. The device of claim 6 wherein said optical radiation is emanated from an optical fiber and said antenna is configured for receiving the optical radiation from the optical fiber.

9. The device of claim 2 wherein said integrated electronic component is configured for transferring an electrical signal to said tunneling device, as said electrical communication, and said tunneling device, in turn, generates said optical radiation from said antenna that is responsive to the electrical signal.

10. The device of claim 9 wherein said antenna is configured to couple said optical radiation into an optical fiber.

11. The device of claim 1 wherein said integrated electronic component is configured for supplying a bias voltage to said electron tunneling device as said voltage difference between the first and second non-insulating layers.

12. An arrangement, comprising:

a plurality of the optoelectronic devices of claim 1 in a spaced apart relationship with one another and configured for communication therebetween using the antenna structure of each optoelectronic device wherein the formation of integrated layers of all of the optoelectronic devices cooperate to define a single integrated circuit chip.

13. An arrangement, comprising:

a plurality of the optoelectronic devices of claim 1 configured for communication therebetween using the antenna structure of each optoelectronic device wherein the formation of integrated layers for each one of the optoelectronic devices is defined by one of a plurality of individual integrated circuit chips.

14. An optoelectronic device, comprising:

a formation of integrated layers, said integrated layers being configured so as to define at least one integrated electronic component; and

an electron tunneling device that is (i) supported directly by at least a portion of the formation of integrated layers, (ii) configured for an electrical communication with said integrated electrical component to provide an interaction therewith, and (iii) configured for an external optical communication in cooperation with said interaction.