Particle Beam Processing Apparatus and Materials Treatable Using the Apparatus

• US 20070045567A1
• Filed: 10/27/2006
• Published: 03/01/2007
• Est. Priority Date: 11/05/1999
• Status: Active Grant

• Current Assignee: Energy Sciences Incorporated (Iwasaki Electric Company Limited)
• Original Assignee: Energy Sciences Incorporated (Iwasaki Electric Company Limited)
• Inventors: Hannafin, George, Rangwalla, Imtiaz, Clough, Harvey
• Granted Patent: US 7,348,580 B2
• Time in Patent Office: Days
• US Class Current: 250/492.100
• CPC Class Codes: B05D 3/068 using ionising radiations (gamma, X, electrons)
• CPC Class Codes: B41M 7/0045 using protective coatings or film forming compositions cured by mechanical wave energy, e.g. ultrasonics, cured by electromagnetic radiation or waves, e.g. ultraviolet radiation, electron beams, or cured by magnetic or electric fields, e.g. electric discharge, plasma
• CPC Class Codes: B41M 7/0081 using electromagnetic radiation or waves, e.g. ultraviolet radiation, electron beams
• CPC Class Codes: G21K 5/10 with provision for relative movement of beam source and object to be irradiated
• CPC Class Codes: H01J 33/00 Discharge tubes with provision for emergence of electrons or ions from the vessel irradiation devices G21K ; particle accelerators H05H; Lenard tubes
• CPC Class Codes: H01J 33/04 Windows

Abstract

The present invention is directed to a particle beam processing apparatus that is smaller in size and operates at a higher efficiency, and also directed to an application of such apparatus to treat a coating on a substrate of a treatable material, such as for flexible packaging. The processing apparatus includes a particle beam generating assembly, a foil support assembly, and a processing assembly. In the particle beam generating assembly, electrons are generated and accelerated to pass through the foil support assembly. In the flexible packaging application, the substrate is fed to the processing apparatus operating at a low voltage, such as 110 kVolts or below, and is exposed to the accelerated electrons to treat the coating on the substrate.

Claims

1. A particle beam processing device of small size and high efficiency that causes a chemical reaction on a substrate, comprising:

a power supply;

a vacuum pump to create and maintain a vacuum environment in a vessel;

a particle generating assembly located in a vacuum vessel and connected to the power supply operating at a first voltage in a range of 110 kVolts or less, the particle generating assembly including at least one filament for generating a plurality of particles upon heating;

a foil support assembly operating at a second voltage, which is higher than the first voltage, to permit at least a portion of said particles to travel from the first to the second voltage and exit the foil support assembly, the foil support assembly comprising a thin foil made of titanium or alloys thereof having a thickness of 10 micrometers or less; and

a processing assembly for receiving said particles exiting the foil support assembly for use to cause said chemical reaction,

wherein a machine yield (K) of the processing device is determined according to;

$K=\frac{\mathrm{Dose}·<br><br>\mathrm{Speed}}{\mathrm{Current}}$

whereby;

K is machine yield measured in Mrads·

feet/min/mAmp,

Dose is energy absorbed per unit mass measured in Mrads,

Speed is feed rate of the substrate measured in feet/min, and

Current is a number of electrons extracted from the heated filament measured in mAmp.

2. A particle beam processing device of claim 1, wherein the machine yield (K) is equal to or above 20/L where L is the width of the processing device measured in feet.

3. A particle beam processing device of small size and high efficiency that causes a chemical reaction on a substrate, comprising:

a power supply;

a vacuum pump to create and maintain a vacuum environment in a vessel;

a particle generating assembly located in a vacuum vessel and connected to the power supply operating at a first voltage in a range of 110 kVolts or less, the particle generating assembly including at least one filament for generating a plurality of particles upon heating;

a foil support assembly operating at a second voltage, which is higher than the first voltage, to permit at least a portion of said particles to travel from the first to the second voltage and exit the foil support assembly, the foil support assembly comprising a thin foil made of aluminum or alloys thereof having a thickness of 20 micrometers or less; and

a processing assembly for receiving said particles exiting the foil support assembly for use to cause said chemical reaction;

wherein a machine yield (K) of the processing device is determined according to;

$K=\frac{\mathrm{Dose}·<br><br>\mathrm{Speed}}{\mathrm{Current}}$

whereby;

K is machine yield measured in Mrads·

feet/min/mAmp,

Dose is energy absorbed per unit mass measured in Mrads,

Speed is feed rate of the substrate measured in feet/min, and

Current is a number of electrons extracted from filament measured in mAmp.

4. A particle beam processing device of claim 3, wherein the machine yield (K) is equal to or above 20/L where L is the width of the processing device measured in feet.

5. A method for causing a chemical reaction on a substrate in a particle beam processing device, comprising:

creating and maintaining a vacuum in a particle generating assembly having at least one filament;

heating the at least one filament to create a plurality of particles;

operating the particle generating assembly at a first voltage having a range of 110 kVolts or less;

operating a foil support assembly having a thin foil at a second voltage, which is higher than the first voltage, to cause at least a portion of said particles to travel from the first voltage to the second voltage, and to exit the vacuum in the particle generating assembly, the thin foil being made of titanium or alloys thereof and having a thickness of 10 micrometers or less; and

passing the exiting particles through the thin foil to enter a processing assembly where the substrate is being exposed to the particles;

wherein a machine yield (K) of the processing device is determined by;

$K=\frac{\mathrm{Dose}·<br><br>\mathrm{Speed}}{\mathrm{Current}}$

whereby;

K is machine yield measured in Mrads·

feet/min/mAmp,

Dose is energy absorbed per unit mass measured in Mrads,

Speed is feed rate of the substrate measured in feet/min, and

Current is a number of electrons extracted from filament measured in mAmp.

6. The method of claim 5, wherein the machine yield (K) is equal to or above 20/L where L is a width of the processing device measured in feet.

7. A method for causing a chemical reaction on a substrate in a particle beam processing device, comprising:

creating and maintaining a vacuum in a particle generating assembly having at least one filament;

heating the at least one filament to create a plurality of particles;

operating the particle generating assembly at a first voltage having a range of 110 kVolts or less;

operating a foil support assembly having a thin foil at a second voltage, which is higher than the first voltage, to cause at least a portion of said particles to travel from the first voltage to the second voltage, and to exit the vacuum in the particle generating assembly, the thin foil being made of aluminum or alloy thereof and having a thickness of 20 micrometers or less; and

passing the exiting particles through the thin foil to enter a processing assembly where the substrate is being exposed to the particles,

wherein a machine yield (K) of the processing device is determined according;

$K=\frac{\mathrm{Dose}·<br><br>\mathrm{Speed}}{\mathrm{Current}}$

whereby;

K is machine yield measured in Mrads·

feet/min/mAmp,

Dose is energy absorbed per unit mass measured in Mrads,

Speed is feed rate of the substrate measured in feet/min, and

Current is a number of electrons extracted from filament measured in mAmp.

8. The method of claim 7, wherein the machine yield (K) is equal to or above 20/L where L is a width of the processing device measured in feet.