System and method for photolithography in semiconductor manufacturing
First Claim
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1. A method for producing a pattern on a substrate layer, the method comprising:
- providing at least one first exposure onto the layer by a higher-precision lithography mechanism; and
providing at least one second exposure onto the layer by a lower-precision lithography mechanism;
thereby producing the pattern on the layer.
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Abstract
A method for producing a pattern on a substrate includes providing at least one exposure of the pattern onto a layer of the substrate by a higher-precision lithography mechanism and providing at least one exposure of the pattern onto a layer of the substrate by a lower-precision lithography mechanism. The exposures can be done in either order, and additional exposures can be included. The higher-precision lithography mechanism can be immersion lithography and the lower-precision lithography mechanism can be dry lithography.
9 Citations
20 Claims
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1. A method for producing a pattern on a substrate layer, the method comprising:
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providing at least one first exposure onto the layer by a higher-precision lithography mechanism; and
providing at least one second exposure onto the layer by a lower-precision lithography mechanism;
thereby producing the pattern on the layer. - View Dependent Claims (2, 3, 4, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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5. A method for photolithography in semiconductor manufacturing, comprising:
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providing a first photoresist layer for a wafer;
providing a first mask for the wafer;
performing a first exposure on the wafer by immersion lithography, wherein the first exposure utilizes the first photoresist layer and the first mask; and
performing a second exposure on the wafer by dry lithography, wherein the second exposure utilizes the first photoresist layer.
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17. A method for double exposure photolithography in semiconductor manufacturing, comprising:
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providing a first photoresist layer for a wafer;
providing a first mask for the wafer;
performing a first exposure to the wafer by immersion lithography wherein the first exposure utilizes the first photoresist layer and the first mask, and wherein a wavelength of light beams used for the immersion lithography is not greater than 193 nm, and wherein a numerical aperture of the immersion lithography is greater than about 0.75; and
performing a second exposure to the wafer by dry lithography, wherein either a second mask or no mask is utilized for the second exposure.
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18. A method for producing a pattern on a substrate layer having first and second duty ratio regions, the method comprising:
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performing a first immersion lithography with a first numerical aperture on the first duty ratio region; and
performing a second immersion lithography with a second numerical aperture on the second duty ratio region;
whereby the pattern is produced on the layer by the two lithography performances. - View Dependent Claims (19, 20)
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Specification