High density led array

• US 20070051964A1
• Filed: 05/12/2006
• Published: 03/08/2007
• Est. Priority Date: 04/12/2004
• Status: Abandoned Application

• Current Assignee: Duwayne Anderson, Mark Owen
• Original Assignee: Duwayne Anderson, Mark Owen
• Inventors: Owen, Mark, Anderson, Duwayne
• Application Number:
  US11/434,544
• Publication Number:
  US 20070051964A1
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: F21K 9/00 Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/644 in intimate contact or integrated with parts of the device other than the semiconductor body
• CPC Class Codes: H01L 33/648 the elements comprising fluids, e.g. heat-pipes

Abstract

A dense array of semiconductor devices having an array of micro-reflectors, the micro-reflectors having characteristics that enhance dense packing of the array in balance with collection and collimation of the array'"'"'s radiant output.

Claims

1-20. -20. (canceled)

21. A dense array of light emitting semiconductor devices, the array providing radiant output directed to a work piece, the array comprising:

a first light emitting semiconductor device;

a first power trace, the first power trace providing power to the first light emitting semiconductor device, and the first power trace having an edge;

a first micro-reflector element, such element being formed using the first power trace and having the first light emitting semiconductor device associated therewith so as to reflect emitted light, and such element including a packing edge associated with the first power trace'"'"'s edge;

a second light emitting semiconductor device;

a second power trace, the second power trace providing power to the second light emitting semiconductor device, and the second power trace having an edge, a second micro-reflector element, such element being formed using the second power trace and having the second light emitting semiconductor device associated therewith so as to reflect emitted light, and such element including a packing edge associated with the second power trace'"'"'s edge;

wherein the first and the second light emitting semiconductor devices are adjacently disposed such that the separation between the first and the second light emitting semiconductor devices follows from;

(a) the distance that the packing edge of the first micro-reflector element extends from the first light emitting semiconductor device toward the second light emitting semiconductor device;

(b) the distance that the packing edge of the second micro-reflector element extends from the second light emitting semiconductor device toward the first light emitting semiconductor device; and

(c) the selected distance separating the respective packing edges of such first and the second light emitting semiconductor devices.

22. The dense array of claim 21, wherein the first micro-reflector element is an area of the first power trace that is associated with the first light emitting semiconductor device, such element'"'"'s packing edge being the first power trace'"'"'s edge.

23. The dense array of claim 22, wherein the second micro-reflector element is an area of the second power trace that is associated with the second light emitting semiconductor device, such element'"'"'s packing edge being the second power trace'"'"'s edge.

24. The dense array of claim 23, wherein the first power trace and the second power trace are formed as portions of a single power trace.

25. The dense array of claim 22, wherein the area has one or more reflective surfaces.

26. The dense array of claim 25, wherein the one or more reflective surfaces are implemented so as to reflect one or more selected spectra of the light emitting semiconductor device.

27. The dense array of claim 25, wherein the one or more reflective surfaces are provided only in the area of the first power trace associated with the first light emitting semiconductor device.

28. The dense array of claim 25, wherein the one or more reflective surfaces are provided for portions of the first power trace not associated with the first light emitting semiconductor device.

29. The dense array of claim 22, wherein the first power trace is formed in a layer disposed on top of a substrate, such that the area is a portion of such layer.

30. The dense array of claim 29, wherein the first power trace is formed using lithographic technology, such that the first micro-reflector element is formed as a substantially flat surface.

31. The dense array of claim 29, wherein the first power trace is formed using a stamping process that stamps the first power trace, such that the first micro-reflector element is a volumetric form stamped in the first power trace.

32. The dense array of claim 29, wherein the first power trace is formed having a substantially flat surface by using lithographic technology, and the first micro-reflector element is a volumetric form stamped in the first power trace by using a stamping process.

33. The dense array of claim 21, further comprising coupling optics interposed between (a) at least one of the first and second light emitting semiconductor devices and (b) the work piece, and wherein the coupling optics comprise one or more of a lens, micro-lens array, layer, material, structure, or a combination of two or more of any such lens, micro-lens array, layer, material or structure, so as to enhance packing density of the first and second light emitting semiconductor devices.

34. The dense array of claim 33, wherein the coupling optics are implemented to enhance packing density in balance with enhancing collection, condensing and/or collimation of the light of one or both of the first and second light emitting semiconductor devices, including such light as is reflected by the respective first and/or second micro-reflector element.

35. The dense array of claim 33, wherein the coupling optics has an interface and, in association with such interface, a selected index of refraction, so as to control reflection of light at such interface by directing or re-directing light reflected by the respective first and/or second micro-reflector element.

36. The dense array of claim 33, wherein the coupling optics is provided so as to address the optical cost associated with the first and/or second micro-reflector elements selected to enhance dense packing.

37. The dense array of claim 21, further comprising a plurality of additional micro-reflector elements and wherein the first and second micro-reflector elements, together with the plurality of additional micro-reflector elements, are arranged in a pattern thereamong.

38. The dense array of claim 37, wherein the pattern responds to one or more of (a) coupling optics, (b) the number, size, and/or type of light emitting semiconductor devices associated with each such micro-reflector element, and/or (c) the near field radiation pattern of one or more such light emitting semiconductor devices.

39. A photoreactive system, the system providing radiant output directed to a work piece in association with a photoreaction, the system comprising:

a light emitting subsystem, the light emitting subsystem including a dense array of light emitting semiconductor devices, including a first light emitting semiconductor device and a second light emitting semiconductor device;

the array having a plurality of micro-reflector elements, including a first micro-reflector element and a second micro-reflector element, said first micro-reflector element having the first light emitting semiconductor device associated therewith so as to reflect emitted light, and such first micro-reflector element including a packing edge, and said second micro-reflector element having the second light emitting semiconductor device associated therewith so as to reflect emitted light, and such second micro-reflector element including a packing edge;

a first power trace and a second power trace, said first micro-reflector element being formed using the first power trace such that the element'"'"'s packing edge is associated with the first power trace'"'"'s edge and said second micro-reflector element being formed using the second power trace such that the element'"'"'s packing edge is associated with the second power trace'"'"'s edge;

wherein the first and the second light emitting semiconductor devices are adjacently disposed such that the separation between the first and the second light emitting semiconductor devices follows from;

(a) the distance that the packing edge of the first micro-reflector element extends from the first light emitting semiconductor device toward the second light emitting semiconductor device;

(b) the distance that the packing edge of the second micro-reflector element extends from the second light emitting semiconductor device toward the first light emitting semiconductor device; and

(c) the selected distance separating the respective packing edges of such first and the second light emitting semiconductor devices.

40. The photoreactive system of claim 39, wherein:

(a) the first micro-reflector element is an area of the first power trace that is associated with the first light emitting semiconductor device, such element'"'"'s packing edge being the first power trace'"'"'s edge;

(b) the second micro-reflector element is an area of the second power trace that is associated with the second light emitting semiconductor device, such element'"'"'s packing edge being the second power trace'"'"'s edge; and

(c) the first power trace and the second power trace are formed as portions of a single power trace.