Radio frequency power amplifier
First Claim
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1. A cascode radio frequency power amplifier, comprising:
- at least two cascaded MOS transistors formed in a mutual substrate, each comprising bulk nodes, and extending between a topmost transistor and a bottom transistor, and wherein the MOS transistors not including the bottom transistor comprise upper transistors, wherein the bulk nodes of the transistors are electrically isolated from each other and connected to a respective source of each transistor, wherein a drain of the topmost transistor is connected to a power supply potential through an inductive load, and wherein a gate of one or more upper transistors is coupled to a self-biasing circuit connected at least between the drain and the gate of the respective upper transistor.
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Abstract
The present invention relates to a cascode radio frequency power amplifier, including at least two cascaded MOS transistors formed in a mutual substrate, where the bulk nodes of the transistors are isolated from each other and connected to the respective source of each transistor. The present invention also teaches that the drain of the topmost transistor is connected to the power supply through an inductive load, and that the gate of each upper transistor is equipped with a self-biasing circuit connected at least between the drain and the gate of the respective upper transistor.
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13 Claims
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1. A cascode radio frequency power amplifier, comprising:
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at least two cascaded MOS transistors formed in a mutual substrate, each comprising bulk nodes, and extending between a topmost transistor and a bottom transistor, and wherein the MOS transistors not including the bottom transistor comprise upper transistors, wherein the bulk nodes of the transistors are electrically isolated from each other and connected to a respective source of each transistor, wherein a drain of the topmost transistor is connected to a power supply potential through an inductive load, and wherein a gate of one or more upper transistors is coupled to a self-biasing circuit connected at least between the drain and the gate of the respective upper transistor. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A radio frequency amplifier, comprising:
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at least two series connected MOS transistors formed in a mutual substrate and each comprising a bulk node, wherein one of the transistors comprises a topmost transistor and has a terminal coupled to a supply potential through a load, and wherein one of the transistors comprises a bottom transistor and has a terminal coupled to a reference potential, and a control terminal forming an amplifier input, wherein the bulk nodes of each transistor is coupled to a respective source terminal thereof, and wherein the bulk nodes of at least two of the MOS transistors are electrically isolated from one another. - View Dependent Claims (9, 10, 11, 12, 13)
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Specification