Insulated gate bipolar transistor

• US 20070080407A1
• Filed: 10/05/2006
• Published: 04/12/2007
• Est. Priority Date: 10/06/2005
• Status: Abandoned Application

• Current Assignee: Sanken Electric Company Limited
• Original Assignee: Sanken Electric Company Limited
• Inventors: Kono, Yoshinobu
• Application Number:
  US11/543,626
• Publication Number:
  US 20070080407A1
• Time in Patent Office: Days
• US Class Current: 257/370
• CPC Class Codes: H01L 29/0834 Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
• CPC Class Codes: H01L 29/32 the imperfections being within the semiconductor body
• CPC Class Codes: H01L 29/36 characterised by the concentration or distribution of impurities in the bulk material within semiconductor regions H01L29/06
• CPC Class Codes: H01L 29/66333 Vertical insulated gate bipolar transistors
• CPC Class Codes: H01L 29/7395 Vertical transistors, e.g. vertical IGBT

Abstract

An IGBT is provided which comprises N+ type extended region 9 sectively formed in P+ type collector region 1 to define a built-in diode in cooperation with N+ type extended region 9, an N− type base region 2 and a P− type base region 3 in semiconducting substrate 10. N− type base region 2 comprises a recombination region 21 developed between P type base region 3 and collector electrode 8 to acquire minority carriers accumulated around recombination region 21 in first base region 2 by recombination region 21 for improvement in recovery property of the diode without increasing voltage in the forward direction since recombination region 21 does not reach between and beneath adjoining second base regions 3 in N type base region 2 for current path.

Claims

1. An insulated gate bipolar transistor comprising:

a semiconducting substrate which comprises;

a collector region of a first conductive type,

a first base region of a second conductive type different from said first conductive type and formed on one main surface of said collector region,

second base regions of the first conductive type each formed adjacent to said first base region, and

emitter regions of the second conductive type each formed adjacent to said corresponding second base region;

gate electrodes each formed in spaced relation to said corresponding second base region through an insulator;

an emitter electrode formed on one main surfaces of said second base region and emitter region; and

a collector electrode formed on the other main surface of said collector region opposite to said first base region;

wherein an extended region is selectively formed of the second conductive type in said collector region to form a diode in cooperation with said second base region, first base region and extended region,

said first base region comprises a recombination region formed between each of said second base regions and collector electrode, and

said recombination region does not reach between and beneath said adjoining second base regions.

3. The insulated gate bipolar transistor of claim 1 or 2, wherein said recombination region is formed between said collector electrode and emitter connection for joining said emitter electrode and second base regions or emitter regions.

2. An insulated gate bipolar transistor comprises a semiconducting substrate which comprises:

a collector region of a first conductive type,

a buffer region of a second conductive type different from said first conductive type and formed on one main surface of said collector region,

a first base region of a second conductive type different from said first conductive type and formed on one main surface of said collector region,

second base regions of the first conductive type each formed adjacent to said first base region, and

emitter regions of the second conductive type each formed adjacent to said corresponding second base region;

gate electrodes each formed in spaced relation to said corresponding second base region through an insulator;

an emitter electrode formed on one main surfaces of said second base region and emitter region; and

a collector electrode formed on the other main surface of said collector region opposite to said first base region;

wherein an extended region is selectively formed of the second conductive type in said collector region to form a diode in cooperation with said second base region, first base region and extended region,

said first base region comprises a recombination region formed between each of said second base regions and buffer region, and

said recombination region does not reach between and beneath said adjoining second base regions, and

said buffer region comprises a second recombination region formed between said gate electrodes and collector electrode.