Systems and methods for fabricating photo masks

• US 20070111112A1
• Filed: 11/14/2006
• Published: 05/17/2007
• Est. Priority Date: 11/15/2005
• Status: Abandoned Application

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Choi, Seong-Woon, Kim, Hee-Bom, Huh, Sung-Min
• Application Number:
  US11/598,754
• Publication Number:
  US 20070111112A1
• Time in Patent Office: Days
• US Class Current: 430/5
• CPC Class Codes: G03F 1/84 Inspecting

Abstract

A system and method for fabricating a photo mask are provided. The method includes preparing weak point data based on mask layout data, fabricating a photo mask based on the mask layout data and extracting critical point data by analyzing the aerial image of the fabricated photo mask based on the weak point data.

Claims

1. A method of fabricating a photo mask, comprising:

generating mask layout data for defining a layout of patterns to be formed on a photo mask;

generating weak point data indicative of predicted weak points of a photo mask based on the mask layout data;

fabricating a photo mask based on the mask layout data; and

extracting critical point data indicative of information on weak points of the fabricated photo mask by analyzing an aerial image of the fabricated photo mask based on the weak point data.

2. The method of claim 1, wherein the generating of the mask layout data includes,

generating circuit layout data, and

modifying the circuit layout data using a correction model.

3. The method of claim 2, wherein the generating the mask layout data further includes,

phase-shift mask processing the circuit layout data.

4. The method of claim 1, wherein the generating of the weak point data includes,

predicting the layout of the photo mask based on the mask layout data, and

generating the weak point data by comparing the predicted layout of the photo mask with circuit layout data to generate a comparison result and analyzing the comparison result, wherein

the weak point data includes information on at least one of coordinates, pattern sizes and size margins of points violating an optical rule.

5. The method of claim 1, wherein the analyzing of the aerial image of the photo mask is performed using a measurement system including a communication apparatus capable of accessing the weak point data and using the weak point data as input data.

6. The method of claim 1, wherein the extracting of the critical point data includes,

extracting information on at least one of coordinates, pattern sizes and size margins of points violating an optical rule by comparing the aerial image of the photo mask with the circuit layout data to generate a comparison result, and analyzing the comparison result at the weak points defined by the weak point data.

7. The method of claim 1, further including,

evaluating the quality of the fabricated photo mask by analyzing the critical point data, and

evaluating the quality of the photo mask on a wafer level through a lithography process using the photo mask.

8. The method of claim 7, wherein if the quality of the photo mask falls below a threshold, at least one of a correction model and circuit layout data is updated based on at least one of the weak point data, the critical point data and the aerial image of the photo mask.

9. The method of claim 7, wherein if the quality of the photo mask falls short of a threshold standard on the wafer level, at least one of a correction model and circuit layout data is updated using at least one of the weak point data, the critical point data and the aerial image of the photo mask.

10. The method of claim 7, further including,

performing a lithography process using the fabricated photo mask when a quality of the photo mask passes a threshold standard, the critical point data being used as data for defining inspection positions during an inspection of the result of the lithography process.

11. A photo mask fabrication system comprising:

at least one database for storing circuit layout data and mask layout data;

a modification apparatus for modifying the circuit layout data to generate the mask layout data;

a weak point analysis apparatus for generating weak point data based on the mask layout data; and

a critical point analysis apparatus for generating critical point data based on the weak point data.

12. The system of claim 11, wherein the weak point analysis apparatus generates weak point data based on the mask layout data, the circuit layout data and a correction model.

13. The system of claim 11, wherein the weak point analysis apparatus generates weak point data based on the mask layout data, the circuit layout data, a correction model and analysis results associated with a previous critical point evaluation.

14. The system of claim 11, wherein the at least one database includes,

a first database for storing the circuit layout data, and

a second database for storing the mask layout data.

15. The system of claim 11, wherein the modifying the circuit layout data further includes,

dividing patterns of the circuit layout data into a plurality of fragments, and

correcting each of the plurality of fragments to generate the mask layout data.

16. The system of claim 15, wherein each of the plurality of fragments is corrected based on a correction model.

17. The system of claim 11, wherein the weak point analysis apparatus includes,

a simulator for predicting a layout of a photo mask, and

a weak point data generating unit for comparing the predicted layout of the photo mask with the circuit layout data to generate a comparison result and analyzing the comparison result to generate the weak point data.

18. The system of claim 11, wherein the at least one database stores a plurality of correction models, and the modification apparatus is connected to the at least one database through the at least one communication apparatus.

19. The system of claim 18, wherein the at least one database includes,

a first database for storing the layout data,

a second database for storing the mask layout data, and

a third database for storing the correction models.

20. The system of claim 11, wherein the critical point analysis apparatus includes,

a measurement apparatus for measuring an aerial image of the photo mask, and

a critical point data generating unit for selectively comparing the aerial image with the circuit layout data to generate a comparison result and analyzing the comparison result at weak points defined by the weak point data.