PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS
First Claim
1. A plasma processing method for performing a desired plasma process on substrates by using a plasma generated in a processing space,wherein a first and a second electrode are disposed in parallel to each other with a specific interval in a processing vessel that is grounded and capable of being vacuum evacuated, the substrate is supported on the second electrode to face the first electrode, the processing vessel is vacuum evacuated to a specific pressure level, a desired processing gas is supplied into the processing space formed between the first electrode, the second electrode and a sidewall of the processing vessel, and a first radio frequency power is supplied to the second electrode to generate the plasma in the processing space, andwherein the first electrode is connected to the processing vessel via an insulator or a space, and is electrically coupled to a ground potential via a capacitance varying unit whose electrostatic capacitance is variable, and the electrostatic capacitance of the capacitance varying unit is controlled based on a process condition of the plasma process performed on the substrate.
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Abstract
A plasma processing method performs a desired plasma process on substrates by using a plasma generated in a processing space. A first and a second electrode are disposed in parallel in a processing vessel that is grounded, the substrate is supported on the second electrode to face the first electrode, the processing vessel is vacuum evacuated, a desired processing gas is supplied into the processing space formed between the first electrode, the second electrode and a sidewall of the processing vessel, and a first radio frequency power is supplied to the second electrode. The first electrode is connected to the processing vessel via an insulator or a space, and is electrically coupled to a ground potential via a capacitance varying unit whose electrostatic capacitance is varied based on a process condition of the plasma process performed on the substrate.
222 Citations
16 Claims
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1. A plasma processing method for performing a desired plasma process on substrates by using a plasma generated in a processing space,
wherein a first and a second electrode are disposed in parallel to each other with a specific interval in a processing vessel that is grounded and capable of being vacuum evacuated, the substrate is supported on the second electrode to face the first electrode, the processing vessel is vacuum evacuated to a specific pressure level, a desired processing gas is supplied into the processing space formed between the first electrode, the second electrode and a sidewall of the processing vessel, and a first radio frequency power is supplied to the second electrode to generate the plasma in the processing space, and wherein the first electrode is connected to the processing vessel via an insulator or a space, and is electrically coupled to a ground potential via a capacitance varying unit whose electrostatic capacitance is variable, and the electrostatic capacitance of the capacitance varying unit is controlled based on a process condition of the plasma process performed on the substrate.
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7. A plasma processing apparatus comprising:
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a processing vessel that is grounded and capable of being vacuum evacuated; a first electrode connected to the processing vessel via an insulator or a space; a capacitance varying unit whose electrostatic capacitance is variable, electrically connected between the first electrode and a ground potential; a second electrode disposed in the processing vessel to be in parallel to the first electrode with a specific interval, for supporting a target substrate thereon to face the first electrode; a processing gas supply unit for supplying a processing gas into a processing space between the first electrode, the second electrode and a sidewall of the processing vessel; a first radio frequency power supply unit for applying a first radio frequency power to the second electrode to generate a plasma of the processing gas in the processing space; and a capacitance control unit for controlling the electrostatic capacitance of the capacitance varying unit based on a process condition of a plasma process performed on the substrate. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A plasma processing method for performing a desired plasma process on substrates by using a plasma generated in a processing space,
wherein a first and a second electrode are disposed in parallel to each other with a specific interval in a processing vessel that is grounded and capable of being vacuum evacuated, the substrate is supported on the second electrode to face the first electrode, the processing vessel is vacuum evacuated to a specific pressure level, a desired processing gas is supplied into the processing space formed between the first electrode, the second electrode and a sidewall of the processing vessel, and a first radio frequency power is supplied to the second electrode to generate the plasma in the processing space, and wherein the first electrode is connected to the processing vessel via an insulator or a space, and is electrically coupled to a ground potential via a capacitance varying unit whose electrostatic capacitance is variable, and the electrostatic capacitance of the capacitance varying unit is controlled based on the number of substrates on which the plasma process is performed.
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15. A plasma processing apparatus comprising:
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a processing vessel that is grounded and capable of being vacuum evacuated; a first electrode connected to the processing vessel via an insulator or a space; a capacitance varying unit whose electrostatic capacitance is variable, electrically connected between the first electrode and a ground potential; a second electrode disposed in the processing vessel to be in parallel to the first electrode with a specific interval, for supporting a target substrate thereon to face the first electrode; a processing gas supply unit for supplying a processing gas into a processing space between the first electrode, the second electrode and a sidewall of the processing vessel; a first radio frequency power supply unit for applying a first radio frequency power to the second electrode to generate a plasma of the processing gas in the processing space; and a capacitance control unit for controlling the electrostatic capacitance of the capacitance varying unit based on the number of substrates on which the plasma process is performed. - View Dependent Claims (16)
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Specification