Semiconductor on glass insulator made using improved hydrogen reduction process
First Claim
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1. A method of forming a semiconductor on glass structure, comprising:
- subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer of the donor semiconductor wafer; and
reducing a concentration of hydrogen at least at the implantation surface of the donor semiconductor wafer using ozonated water.
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Abstract
Methods and apparatus for producing a semiconductor on glass (SiOG) structure include: subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer of the donor semiconductor wafer; reducing a concentration of hydrogen at least at the implantation surface of the donor semiconductor wafer using ozonated water; bonding the implantation surface of the exfoliation layer to a glass substrate using electrolysis; and separating the exfoliation layer from the donor semiconductor wafer, thereby exposing at least one cleaved surface.
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31 Claims
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1. A method of forming a semiconductor on glass structure, comprising:
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subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer of the donor semiconductor wafer; and reducing a concentration of hydrogen at least at the implantation surface of the donor semiconductor wafer using ozonated water. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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24. A method of forming a semiconductor on glass structure, comprising:
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subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer of the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a glass substrate using electrolysis; and separating the exfoliation layer from the donor semiconductor wafer, thereby exposing at least one cleaved surface; subjecting the cleaved surface to thinning or polishing to produce a post processed surface; and subjecting the post processed surface to a cleaning process using ozonated water. - View Dependent Claims (25, 26, 27, 28, 29, 30, 31)
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Specification