Method of fabricating vertical devices using a metal support film
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Accused Products
Abstract
A vertical topology device includes a conductive adhesion structure having a first surface and a second surface, a conductive thick film support formed on the first surface, and a semiconductive device having an upper electrical contact and located over the conductive adhesion layer. Electrical current can flow between the conductive thick film and the upper electrical contact.
112 Citations
81 Claims
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1-61. -61. (canceled)
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62. A method of producing semiconductor devices, comprising:
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forming a plurality of semiconductor layers over a substrate;
defining individual semiconductor devices from the semiconductor layers;
forming first electrical contacts over each individual semiconductor devices;
removing the substrate from the semiconductor layers;
forming a conductive support structure over the exposed surface of the semiconductor layers by removing the substrate. - View Dependent Claims (63, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75, 76)
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77. A method of producing semiconductor devices, comprising:
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forming a semiconductor device having an electrical contact;
forming a reflective structure over the semiconductor device;
forming an adhesion structure over the reflective structure, the adhesion structure including a material to assist formation of a metallic support layer over the adhesion structure;
forming the metallic support layer over the adhesion structure. - View Dependent Claims (78, 79, 80)
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81. A method of producing semiconductor devices, comprising:
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forming a semiconductor device having an electrical contact over a substrate;
forming a reflective layer over the semiconductor device;
forming an adhesion layer over the reflective structure;
forming a metallic support layer over the adhesion layer by one of electroplating, electro-less plating, chemical vapor deposition (CVD), and physical vapor deposition (PVD).
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Specification