Method of fabricating vertical devices using a metal support film

• US 7,772,020 B2
• Filed: 08/02/2007
• Issued: 08/10/2010
• Est. Priority Date: 04/09/2002
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Electronics, Inc. (LG Corporation)
• Inventors: Yoo, Myung Cheol
• Primary Examiner(s): Wilczewski; Mary
• Assistant Examiner(s): Thomas; Toniae M
• Application Number:
  US11/882,575
• Publication Number:
  US 20080064132A1
• Time in Patent Office: 1,104 Days
• Field of Search: 438/29, 438/33, 438/47, 438/455, 438/458, 438/39, 438/42, 438/464, 257/E21.366, 372/43.01
• US Class Current: 438/29
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/04 with a quantum effect structure or superlattice, e.g. tunnel junction
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/14 with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H01L 33/641 characterized by the materials
• CPC Class Codes: H01L 33/647 the elements conducting electric current to or from the semiconductor body

Abstract

A vertical topology device includes a conductive adhesion structure having a first surface and a second surface, a conductive thick film support formed on the first surface, and a semiconductive device having an upper electrical contact and located over the conductive adhesion layer. Electrical current can flow between the conductive thick film and the upper electrical contact.

Claims

1. A method of producing light emitting devices, comprising:

forming a plurality of semiconductor layers over a substrate;

forming trenches into the semiconductor layers, wherein the trenches define individual devices;

removing the substrate from the semiconductor layers;

forming a reflective structure over the semiconductor layers, wherein the reflective structure is configured to reflect light from the semiconductor layers;

providing a conductive support structure over the reflective structure;

forming openings at the conductive support structure, the openings defining individual conductive supports, wherein the openings are substantially aligned with the trenches; and

separating the devices with conductive support.

2. The method of claim 1, wherein providing the conductive support structure includes forming a support layer over the reflective structure.

3. The method of claim 1, wherein the conductive support structure includes at least one of Cu, Au, or Al.

4. The method of claim 1, wherein the reflective structure includes at least one of titanium and aluminum.

5. The method of claim 1 further comprising forming an adhesion structure over the reflective structure.

6. The method of claim 5, wherein the adhesion structure includes at least one of Cr and Au.

7. The method of claim 5, wherein the adhesion structure is multilayer.

8. The method of claim 1, wherein the conductive support structure is less than about 100 microns thick.

9. The method of claim 1, wherein the conductive support structure comprises at least one of Cu, Au, and Al.

10. The method of claim 1, wherein removing the substrate from the semiconductor layers is performed after forming the trenches.

11. The method of claim 1, wherein providing the conductive support structure is performed after removing the substrate from the semiconductor layers.

12. The method of claim 1 further comprising:

providing a temporary support structure over the semiconductor layers.

13. The method of claim 12, wherein providing the temporary support structure is performed after forming the trenches.

14. The method of claim 12, wherein providing the temporary support structure comprises forming a photo-resist layer over the semiconductor layers.

15. The method of claim 12, wherein providing the temporary support structure is performed by using an epoxy adhesive.

16. The method of claim 1, wherein separating the devices is performed by applying stress at the trenches.

17. The method of claim 1, wherein separating the devices is performed by applying stress at the aligned portions of the openings and the trenches.

18. The method of claim 1, wherein forming the trenches are performed by using a dry etching method.

19. The method of claim 1, wherein the dry etching method is inductively coupled plasma reactive ion etching (ICP RIE).

20. The method of claim 1, wherein forming the openings at the conductive support structure is performed by etching the conductive support structure.

21. The method of claim 1, wherein the conductive support structure comprises a thermally conductive material.

22. The method of claim 1, wherein the conductive support structure comprises an electrically conductive material.

23. The method of claim 1, wherein the reflective structure also serves as an electrode.

24. The method of claim 1, wherein the reflective structure comprises:

an ohmic contact; and

a reflective layer over the ohmic contact.

25. The method of claim 1, wherein the reflective structure is further configured to reflect light back into and through the semiconductor layers.