Rectifying Contact to an N-Type Oxide Material or a Substantially Insulating Oxide Material

• US 20080070383A1
• Filed: 11/16/2007
• Published: 03/20/2008
• Est. Priority Date: 11/21/2005
• Status: Abandoned Application

• Current Assignee: Gregory Herman, Randy Hoffman
• Original Assignee: Gregory Herman, Randy Hoffman
• Inventors: Herman, Gregory, Hoffman, Randy
• Application Number:
  US11/941,800
• Publication Number:
  US 20080070383A1
• Time in Patent Office: Days
• US Class Current: 438/478
• CPC Class Codes: H01L 29/242 AIBVI or AIBVII compounds, e.g. Cu2O, Cu I H01L29/247 takes precedence
• CPC Class Codes: H01L 29/47 Schottky barrier electrodes H01L29/435 takes precedence
• CPC Class Codes: H01L 29/872 Schottky diodes

Abstract

A rectifying contact to an n-type oxide material and/or a substantially insulating oxide material includes a p-type oxide material. The p-type oxide material includes a copper species and a metal species, each of which are present in an amount ranging from about 10 atomic % to about 90 atomic % of total metal in the p-type oxide material. The metal species is selected from tin, zinc, and combinations thereof.

Claims

1-35. -35. (canceled)

36. A method of making a diode, comprising:

providing a rectifying contact having a p-type oxide material, including;

a copper species present in an amount ranging from about 10 atomic % to about 90 atomic % of total metal in the p-type oxide material; and

a metal species present in an amount ranging from about 10 atomic % to about 90 atomic % of total metal in the p-type oxide material, the metal species selected from tin, zinc, and combinations thereof; and

establishing the p-type oxide material in electrical contact with an n-type oxide material, thereby forming a p-n junction.

37. The method as defined in claim 36, further comprising establishing a substantially insulating oxide material between the p-type oxide material and the n-type oxide material, thereby forming a p-i-n junction.

38. The method as defined in claim 36, further comprising establishing the p-n junction on a substrate.

39. The method as defined in claim 36 wherein establishing the p-type oxide material in electrical contact with the n-type oxide material is accomplished via sputter deposition at ambient temperature.

40. A method of using a p-type oxide material, the method comprising:

establishing the p-type oxide material in electrical contact with an n-type oxide material, the p-type oxide material including;

a copper species present in an amount ranging from about 10 atomic % to about 90 atomic % of total metal in the p-type oxide material; and

a metal species selected from zinc, tin, and combinations thereof, the metal species present in an amount ranging from about 10 atomic % to about 90 atomic % of total metal in the p-type oxide material;

wherein the p-type oxide material is adapted to provide a rectifying contact to an

41. (canceled)