Stage for plasma processing apparatus, and plasma processing apparatus
First Claim
1. A stage for a plasma processing apparatus, the stage being configured to place on a placing surface thereof a substrate to be processed, the stage comprising:
- a conductive member connected to a radiofrequency power source, the conductive member serving as an electrode for generating a plasma and/or as an electrode for drawing ions from a plasma;
a dielectric layer covering a center part of an upper surface of the conductive member, for making uniform a radiofrequency electric field applied to a plasma through a substrate to be processed placed on the placing surface; and
an electrostatic chuck laminated on the dielectric layer, the electric chuck having a plurality of electrode films embedded therein, the electrode films being separated apart from each other in a radial direction of the stage to allow passage of a radiofrequency;
wherein an outer edge of the dielectric layer is positioned right below or outside an inner edge of at least one separation area of the separated electrode films, and the separated electrode films are insulated to each other as to a radiofrequency.
1 Assignment
0 Petitions
Accused Products
Abstract
[Object] To provide a stage for plasma processing apparatus, the stage being capable of improving uniformity of electric field strength in a plasma so as to enhance an in-plane uniformity of a plasma process to a substrate, and to provide a plasma processing apparatus provided with this stage.
[Means for Solving the Problem] A stage 1 for a plasma processing apparatus 2 comprises: a conductive member 21 serving as an electrode for generating a plasma or the like; a dielectric layer 22 covering a center part of an upper surface of the conductive member, for making uniform a radiofrequency electric field applied to a plasma through a substrate to be processed (wafer W); and an electrostatic chuck laminated on the dielectric layer 22, the electric chuck having a plurality of electrode films embedded therein, the electrode films being separated apart from each other in a radial direction of the stage to allow passage of a radiofrequency. An outer edge of the dielectric layer 22 is positioned right below or outside an inner edge of at least one separation area 23c of the separated electrode films 23b and 23d. The separated electrode films 23b and 23d are insulated to each other as to a radiofrequency.
45 Citations
7 Claims
-
1. A stage for a plasma processing apparatus, the stage being configured to place on a placing surface thereof a substrate to be processed, the stage comprising:
-
a conductive member connected to a radiofrequency power source, the conductive member serving as an electrode for generating a plasma and/or as an electrode for drawing ions from a plasma;
a dielectric layer covering a center part of an upper surface of the conductive member, for making uniform a radiofrequency electric field applied to a plasma through a substrate to be processed placed on the placing surface; and
an electrostatic chuck laminated on the dielectric layer, the electric chuck having a plurality of electrode films embedded therein, the electrode films being separated apart from each other in a radial direction of the stage to allow passage of a radiofrequency;
wherein an outer edge of the dielectric layer is positioned right below or outside an inner edge of at least one separation area of the separated electrode films, and the separated electrode films are insulated to each other as to a radiofrequency. - View Dependent Claims (2, 4, 5, 6, 7)
-
-
3. A stage for plasma processing apparatus, the stage being configured to place on a placing surface thereof a substrate to be processed, the stage comprising:
-
a conductive member connected to a radiofrequency power source, the conductive member serving as an electrode for generating a plasma and/or as an electrode for drawing ions from a plasma;
a dielectric layer covering a center part of an upper surface of the conductive member, for making uniform a radiofrequency electric field applied to a plasma through a substrate to be processed placed on the placing surface; and
an electrostatic chuck laminated on the dielectric layer, the electric chuck having a hole formed in a position corresponding to a center part of the stage to allow passage of a radiofrequency;
wherein the dielectric layer is positioned below the hole.
-
Specification