Masking high-aspect aspect ratio structures

• US 20080138581A1
• Filed: 05/29/2007
• Published: 06/12/2008
• Est. Priority Date: 07/17/2006
• Status: Abandoned Application

• Current Assignee: University of Utah Research Foundation (State of Utah)
• Original Assignee: University of Utah Research Foundation (State of Utah)
• Inventors: Negi, Sandeep, Solzbacher, Florian, Bhandari, Rajmohan, Normann, Richard
• Application Number:
  US11/807,763
• Publication Number:
  US 20080138581A1
• Time in Patent Office: Days
• US Class Current: 428/156
• CPC Class Codes: G03F 7/16 Coating processes; Apparatus therefor applying coatings to base materials in general B05; applying photosensitive compositions to base for photographic purposes G03C1/74
• CPC Class Codes: Y10T 428/24479 including variation in thickness

Abstract

A method of masking high-aspect ratio structures on a wafer includes submerging the wafer in a resist material so that the high-aspect ratio structures are at least partially embedded within the resist material. The resist material is cured and further processing steps, such as for example oxygen plasma etching, are applied, for example to remove portions of the resist material and material from upper portions of the high-aspect ratio structures.

Claims

1. A method of masking high-aspect ratio structures on a wafer comprising:

submerging the wafer in a resist material so that the high-aspect ratio structures are at least partially embedded within the resist material;

curing the resist material; and

applying a further processing step to the wafer.

2. The method of claim 1, further comprising placing the wafer into a receptacle of sufficient depth to contain the resist material to a desired level.

3. The method of claim 1, further comprising placing the wafer in a vacuum to encourage bubble elimination from the resist material.

4. The method of claim 1, further comprising stripping the resist material from the wafer.

5. The method of claim 1, wherein the resist is a positive photo resist material and further comprising, before curing the photo resist material:

drying the positive photo resist material;

exposing the top layer of the positive photo resist material to a light source; and

removing the top layer of the positive photo resist material to reveal upper portions of the high-aspect ratio structures while remaining photo resist material covers lower portions of the high-aspect ratio structures.

6. The method of claim 5, wherein the upper portions of the high-aspect ratio structures define a non-planar surface to which the top layer of the positive photo resist conforms.

7. The method of claim 1, wherein the resist is a negative photo resist material and further comprising, before curing the photo resist material:

drying the negative photo resist material;

exposing the top layer of the negative photo resist material to a light source; and

removing the negative photo resist material to reveal lower portions of the high-aspect ratio structures while remaining photo resist material covers upper portions of the high-aspect ratio structures.

8. The method of claim 7, wherein the upper portions of the high-aspect ratio structures define a non-planar surface to which the top layer of the negative photo resist conforms.

9. The method of claim 1, wherein the high-aspect ratio structures are completely submerged within the resist material.

10. The method of claim 1, wherein submerging the wafer comprises spin coating the wafer with the resist material.

11. The method of claim 1, wherein the further processing step is selected from the group consisting of plasma etching, wet etching, vapor deposition, sputtering, laser ablation, and combinations thereof.

12. The method of claim 1, wherein the further processing step comprising removing a coating previously applied to the upper portions of the high-aspect ratio structures.

13. A product formed by the process of claim 1.

14. A method of masking high-aspect ratio structures on a wafer comprising:

spin coating the wafer with a positive photo resist material until the high-aspect ratio structures are completely embedded within the positive photo resist material, a top layer of the positive photo resist material covering upper portions of the high-aspect ratio structures;

drying the positive photo resist material;

exposing the top layer of the positive photo resist material;

removing the top layer of the positive photo resist material using a developer solution to reveal the upper portions of the high-aspect ratio structures while remaining photo resist material covers lower portions of the high-aspect ratio structures;

curing the remaining positive photo resist material; and

applying a further processing step to the upper portions of the high-aspect ratio structures.

15. The method of claim 14, wherein the further processing step is oxygen plasma etching of the upper portions of the high-aspect ratio structures.

16. The method of claim 14, wherein the upper portions of the high-aspect ratio structures define a non-planar surface to which the top layer of the positive photo resist conforms thereto.

17. The method of claim 14, wherein the high-aspect ratio structures include sacrificial structures positioned to control contouring of the top layer of the positive photo resist based on surface tension of the positive photo resist.

18. A product formed by the process of claim 14.

19. A micro-needle array comprising:

a substrate;

a plurality of needles supported by the substrate;

an electrically conductive coating disposed on the plurality of needles; and

an electrically insulating coating disposed over the electrically conductive coating except on deencapsulated portions of tips of the needles, the deencapsulated portions being substantially uniform in tip length.

20. The micro-needle array of claim 19, wherein the deencapsulated portions extend less than about 50 micrometers from the tip with a tolerance within plus or minus 10 micrometers.

21. The micro-needle array of claim 19, wherein the tips of the micro-needles define a non-planar surface.

22. The micro-needle array of claim 21, wherein the deencapsulated portions extend less than about 150 micrometers from the tip with a tolerance of plus or minus 50 micrometers