Fabrication of Conductive Metal Layer on Semiconductor Devices
First Claim
1. A method for fabrication of a light emitting device on substrate, the light emitting device having a wafer with multiple epitaxial layers and a first ohmic contact layer on the epitaxial layers remote from the substrate;
- the method including;
(a) applying to the ohmic first contact layer a seed layer of a thermally conductive metal;
(b) electroplating a relatively thick layer of the thermally conductive metal on the seed layer; and
(c) removing the substrate.
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Abstract
A method for fabrication of a light emitting device on a substrate, the light emitting device having a wafer with multiple epitaxial layers and an ohmic contact layer on the epitaxial layers remote from the substrate. The method includes the steps: (a) applying to the ohmic contact layer a seed layer of a thermally conductive metal; (b) electroplating a relatively thick layer of the conductive metal on the seed layer; and (c) removing the substrate. A corresponding light emitting device is also disclosed. The light emitting device is a GaN light emitting diode or laser diode.
79 Citations
51 Claims
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1. A method for fabrication of a light emitting device on substrate, the light emitting device having a wafer with multiple epitaxial layers and a first ohmic contact layer on the epitaxial layers remote from the substrate;
- the method including;
(a) applying to the ohmic first contact layer a seed layer of a thermally conductive metal; (b) electroplating a relatively thick layer of the thermally conductive metal on the seed layer; and (c) removing the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 9, 10, 12, 14, 15, 16, 18, 19, 20, 21, 23, 24, 25, 26, 27, 28, 29, 30)
- the method including;
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7-8. -8. (canceled)
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11. (canceled)
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13. (canceled)
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17. (canceled)
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22. (canceled)
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31. A light emitting device comprising epitaxial layers, a first ohmic contact layer on a first surface of the epitaxial layers, a relatively thick layer of a thermally conductive metal on the first ohmic contact layer, and a second ohmic contact layer on a second surface of the epitaxial layers;
- the relatively thick layer being applied by electroplating.
- View Dependent Claims (32, 33, 34, 35, 36, 38, 39, 40)
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37. (canceled)
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41. A light emitting device comprising epitaxial layers, a first ohmic contact layer on a first surface of the epitaxial layers, an adhesive layer on the first ohmic contact layer, a seed layer of a thermally conductive metal on the adhesive layer, and a relatively thick layer of the thermally conductive metal on seed layer;
- the first ohmic contact layer, at its interface with the epitaxial layers, is a mirror.
- View Dependent Claims (42, 43, 44, 45, 46)
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47. A method of fabrication of a light emitting device, the method including:
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(a) on a substrate with a wafer comprising multiple GaN-related epitaxial layers, forming a first ohmic contact layer on a first surface of the wafer; (b) removing the substrate from the wafer; and (c) forming a second ohmic contact layer on a second surface of the wafer, the second ohmic contact layer having bonding pads formed thereon. - View Dependent Claims (48, 50, 51)
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49. (canceled)
Specification