THIN FILM TRANSITOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
First Claim
1. A method of manufacturing a thin film transistor substrate, the method comprising:
- forming a first conductive pattern group including a gate electrode on a substrate;
forming a gate insulating layer on the first conductive pattern group;
forming a semiconductor layer and an ohmic contact layer on the gate insulating layer by patterning an amorphous silicon layer and an oxide semiconductor layer, respectively;
forming a second conductive pattern group including a source electrode and a drain electrode on the ohmic contact layer by patterning a data metal layer;
forming a protection layer including a contact hole on the second conductive pattern group; and
forming a pixel electrode electrically connected to a portion of the drain electrode through the contact hole on the protection layer.
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Accused Products
Abstract
A method of manufacturing a thin film transistor (“TFT”) substrate includes forming a first conductive pattern group including a gate electrode on a substrate, forming a gate insulating layer on the first conductive pattern group, forming a semiconductor layer and an ohmic contact layer on the gate insulating layer by patterning an amorphous silicon layer and an oxide semiconductor layer, forming a second conductive pattern group including a source electrode and a drain electrode on the ohmic contact layer by patterning a data metal layer, forming a protection layer including a contact hole on the second conductive pattern group, and forming a pixel electrode on the contact hole of the protection layer. The TFT substrate including the ohmic contact layer formed of an oxide semiconductor is further provided.
3864 Citations
24 Claims
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1. A method of manufacturing a thin film transistor substrate, the method comprising:
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forming a first conductive pattern group including a gate electrode on a substrate; forming a gate insulating layer on the first conductive pattern group; forming a semiconductor layer and an ohmic contact layer on the gate insulating layer by patterning an amorphous silicon layer and an oxide semiconductor layer, respectively; forming a second conductive pattern group including a source electrode and a drain electrode on the ohmic contact layer by patterning a data metal layer; forming a protection layer including a contact hole on the second conductive pattern group; and forming a pixel electrode electrically connected to a portion of the drain electrode through the contact hole on the protection layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of manufacturing a thin film transistor substrate, the method comprising:
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forming a first conductive pattern group including a gate electrode on a substrate; sequentially depositing a gate insulating layer, an amorphous silicon layer, an oxide semiconductor layer, and a data metal layer on the first conductive pattern group; forming a second conductive pattern group including a semiconductor layer, an ohmic contact layer, a source electrode, and a drain electrode by patterning the amorphous silicon layer, the oxide semiconductor layer, and the data metal layer, respectively; forming a protection layer including a contact hole on the second conductive pattern group; and forming a pixel electrode electrically connected to a portion of the drain electrode through the contact hole on the protection layer. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A thin film transistor substrate, comprising:
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a gate electrode formed on a substrate; a gate insulating layer formed to cover the gate electrode; a semiconductor layer formed to overlap the gate electrode on the gate insulating layer; an ohmic contact layer formed of an oxide semiconductor on the semiconductor layer; and a source electrode and a drain electrode formed on the ohmic contact layer. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24)
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Specification