Semiconductor Devices Including Transistors Having a Recessed Channel Region and Methods of Fabricating the Same
First Claim
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1. A semiconductor device comprising:
- a gate trench in an active region of a semiconductor substrate;
a gate electrode in the gate trench;
a low-concentration impurity region in the active region adjacent to a sidewall of the gate trench; and
a high-concentration impurity region between the low-concentration impurity region and the sidewall of the gate trench and along the sidewall of the gate trench.
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Abstract
Some embodiments of the present invention provide semiconductor devices including a gate trench in an active region of a semiconductor substrate and a gate electrode in the gate trench. A low-concentration impurity region is provided in the active region adjacent to a sidewall of the gate trench. A high-concentration impurity region is provided between the low-concentration impurity region and the sidewall of the gate trench and along the sidewall of the gate trench. Related methods of fabricating semiconductor devices are also provided herein.
14 Citations
20 Claims
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1. A semiconductor device comprising:
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a gate trench in an active region of a semiconductor substrate; a gate electrode in the gate trench; a low-concentration impurity region in the active region adjacent to a sidewall of the gate trench; and a high-concentration impurity region between the low-concentration impurity region and the sidewall of the gate trench and along the sidewall of the gate trench. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of fabricating a semiconductor device, comprising:
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forming a preliminary impurity region in an active region of a semiconductor substrate; forming a first gate trench through the preliminary impurity region; forming a high-concentration impurity region in the preliminary impurity region adjacent to a sidewall of the first gate trench, the high-concentration impurity region being formed along the sidewall of the first gate trench; forming a second gate trench beneath the first gate trench; and forming a low-concentration impurity region in the preliminary impurity region adjacent to the high-concentration impurity region. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A method of fabricating a semiconductor device, comprising:
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forming a first gate trench in an active region of a semiconductor substrate; forming a high-concentration impurity region in the active region adjacent to a sidewall of the first gate trench, the high-concentration impurity region being formed along the sidewall of the first gate trench; forming a second gate trench beneath the first gate trench; forming a gate electrode in the first and second gate trenches; and implanting impurity ions into the active region using the gate electrode as an ion implantation mask, thereby forming a low-concentration impurity region adjacent to the high-concentration impurity region.
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Specification