MEMORY WITH LEVEL SHIFTING WORD LINE DRIVER AND METHOD THEREOF

  • US 20090021990A1
  • Filed: 09/12/2008
  • Published: 01/22/2009
  • Est. Priority Date: 05/15/2006
  • Status: Active Grant
First Claim
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1. A circuit device comprising:

  • a word line driver having a first input to receive a first predecode value, a second input to receive a second predecode value, and an output coupled to a word line of a memory, the word line driver comprising;

    a first transistor having a gate electrode coupled to the first input, a first current electrode coupled to the second input, and a second current electrode coupled to a first node;

    a second transistor having a gate electrode coupled to a first voltage reference, a first current electrode coupled to a second voltage reference, and a second current electrode coupled to the first node;

    a third transistor having a gate electrode coupled to the first node, a first current electrode coupled to a third voltage reference, and a second current electrode coupled to a second node;

    a fourth transistor having a gate electrode coupled to the first node, a first current electrode coupled to the second node, and a second current electrode coupled to the first voltage reference; and

    wherein the second node is coupled to a word line of a memory.

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