SEMICONDUCTOR APPARATUS, MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS, AND JOINT MATERIAL

• US 20090096100A1
• Filed: 10/07/2008
• Published: 04/16/2009
• Est. Priority Date: 10/10/2007
• Status: Active Grant

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Renesas Electronics Corporation
• Inventors: Oka, Hiroi, Yato, Yuichi, Nakajo, Takuya, Itou, Kazutoshi, KAJIWARA, Ryoichi
• Granted Patent: US 8,643,185 B2
• Time in Patent Office: Days
• US Class Current: 257/741
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/04026 Bonding areas specifically adapted for layer connectors
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/13144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/29101 the principal constituent melting at a temperature of less than 400°C
• CPC Class Codes: H01L 2224/29111 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/29139 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/29324 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/29339 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/29344 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/29347 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/29355 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/32013 the layer connector being larger than the bonding area, e.g. bond pad
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/37124 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/37147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/40245 the item being metallic
• CPC Class Codes: H01L 2224/45124 : Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48091 : Arched
• CPC Class Codes: H01L 2224/48247 : connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48472 : the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 2224/4903 : Connectors having different sizes, e.g. different diameters
• CPC Class Codes: H01L 2224/73204 : the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/73221 : Strap and wire connectors
• CPC Class Codes: H01L 2224/73265 : Layer and wire connectors
• CPC Class Codes: H01L 2224/81193 : wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/81801 : Soldering or alloying
• CPC Class Codes: H01L 2224/8184 : Sintering
• CPC Class Codes: H01L 2224/83455 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/83801 : Soldering or alloying
• CPC Class Codes: H01L 2224/8384 : Sintering
• CPC Class Codes: H01L 23/49513 : having bonding material between chip and die pad
• CPC Class Codes: H01L 23/49524 : the additional leads being a tape carrier or flat leads
• CPC Class Codes: H01L 23/49562 : for devices being provided for in H01L29/00
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/33 : of a plurality of layer connectors
• CPC Class Codes: H01L 24/37 : of an individual strap connector
• CPC Class Codes: H01L 24/40 : of an individual strap connector
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01012 : Magnesium [Mg]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01032 : Germanium [Ge]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01051 : Antimony [Sb]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/0132 : Binary Alloys
• CPC Class Codes: H01L 2924/0133 : Ternary Alloys
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/10272 : Silicon Carbide [SiC]
• CPC Class Codes: H01L 2924/1033 : Gallium nitride [GaN]
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/15747 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19042 : being an inductor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/19105 : in a side-by-side arrangement on a common die mounting substrate
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/351 : Thermal stress
• CPC Class Codes: H01L 2924/3512 : Cracking
• CPC Class Codes: H05K 2201/0116 : Porous, e.g. foam
• CPC Class Codes: H05K 2201/0218 : Composite particles, i.e. first metal coated with second metal
• CPC Class Codes: H05K 2201/0272 : Mixed conductive particles, i.e. using different conductive particles, e.g. differing in shape
• CPC Class Codes: H05K 2201/10636 : Leadless chip, e.g. chip capacitor or resistor
• CPC Class Codes: H05K 2203/1131 : Sintering, i.e. fusing of metal particles to achieve or improve electrical conductivity
• CPC Class Codes: H05K 2203/121 : Metallo-organic compounds
• CPC Class Codes: H05K 2203/125 : Inorganic compounds, e.g. silver salt
• CPC Class Codes: H05K 3/321 : by conductive adhesives
• CPC Class Codes: Y02P 70/50 : Manufacturing or production processes characterised by the final manufactured product

Abstract

A die bonding portion is metallically bonded by well-conductive Cu metal powders with a maximum particle diameter of about 15 μm to 200 μm and adhesive layers of Ag, and minute holes are evenly dispersed in a joint layer. With this structure, the reflow resistance of about 260° C. and reliability under thermal cycle test can be ensured without using lead.

Claims

1. A semiconductor apparatus having a structure in which one or more semiconductor parts and one or more conductive members are connected through electric conduction,

wherein a bonding layer containing silver is formed at a joint portion between the semiconductor part and the conductive member,

holes are formed in the bonding layer so as to be almost evenly dispersed in a whole area of the bonding layer,

a volume ratio occupied by the holes in the bonding layer is in a range from 5 vol % to 70 vol %, and

a joint structure is formed in which the semiconductor part and the bonding layer, and the joint layer and the conductive member are metallically bonded respectively with using silver as a bonding material.

2. The semiconductor apparatus according to claim 1,

wherein the semiconductor part includes a power transistor element, and

the volume ratio occupied by the holes in the bonding layer is in a range from 20 vol % to 70 vol %.

3. The semiconductor apparatus according to claim 2,

wherein a part of the conductive member and the semiconductor part are encapsulated with resin,

the semiconductor part is provided with a first electrode and a second electrode on a first main surface and a second main surface reverse to the first main surface, respectively,

a first conductive member of the conductive members is metallically bonded to the first electrode via the bonding layer,

a second conductive member of the conductive members is metallically bonded to the second electrode via the bonding layer,

the first conductive member and the second conductive member extend to outside of the resin, and

the volume ratio occupied by the holes in the bonding layer is in a range from 50 vol % to 70 vol %.

4. The semiconductor apparatus according to claim 1,

wherein the semiconductor part includes elements for a high-frequency device,

a plurality of first electrodes are formed on a first main surface of the semiconductor part,

the semiconductor part is electrically connected to the conductive member via the plurality of first electrodes,

the plurality of first electrodes are metallically bonded to the conductive member via the bonding layer, and

the volume ratio occupied by the holes in the bonding layer is in a range from 5 vol % to 10 vol %.

9. The semiconductor apparatus according to claim 1,

wherein insulating resin is filled at least in a part of the holes.

5. A semiconductor apparatus having a structure in which one or more semiconductor parts and one or more conductive members are connected through electric conduction,

wherein a bonding layer is formed at a joint portion between the semiconductor part and the conductive member,

the bonding layer is formed of high-melting-point and well-conductive metal powders and a silver bonding material for coupling them, and

a joint structure is formed in which the semiconductor part and the bonding layer, and the joint layer and the conductive member are metallically bonded respectively with using the silver bonding material.

6. The semiconductor apparatus according to claim 5,

wherein a maximum particle diameter of the metal powders is 15 μ

m to 200 μ

m.

7. The semiconductor apparatus according to claim 5,

wherein a volume ratio occupied by holes in the bonding layer is in a range from 5 vol % to 70 vol %.

8. The semiconductor apparatus according to claim 5,

wherein the metal powders are formed of either one of single metal powders of gold, silver, copper and nickel and composite metal powders obtained by coating an outermost surface of copper, nickel, aluminum, magnesium, molybdenum or tungsten serving as a core material with gold or silver.

10. A manufacturing method of a semiconductor apparatus having a structure in which one or more semiconductor parts and one or more conductive members are connected through electric conduction, the method comprising the steps of:

(a) supplying metal paste containing metallo-organic silver compound dissociated at a temperature of 350°

C. or lower, well-conductive metal powders with a maximum particle diameter of 15 to 200 μ

m and solvent onto a joint surface of the conductive member or the semiconductor part;

(b) pressing the semiconductor part or the conductive member, thereby mounting the semiconductor part or the conductive member on the metal paste; and

(c) jointing the semiconductor part and the conductive member by heating to 100°

C. to 350°

C. in an atmosphere,

wherein a structure in which the semiconductor part and the conductive member are jointed by metal bonding is formed by removing an organic constituent in the metal paste.

11. The manufacturing method of a semiconductor apparatus according to claim 10,

wherein the step (c) comprises the steps of:

(c1) heating to 100°

C. to 350°

C. in an atmosphere under a pressureless condition or while applying a pressure of 1 MPa or less between the semiconductor part and the conductive member; and

(c2) after the step (c1), heating to 150°

C. to 400°

C. in a reductive atmosphere under a pressureless condition or while applying a pressure of 1 MPa or less between the semiconductor part and the conductive member.

12. A joint material for metallically bonding a semiconductor part and a conductive member, comprising:

a metallo-organic silver compound decomposed at a temperature of 350°

C. or lower;

well-conductive metal powders with a maximum particle diameter of 15 μ

m to 200 μ

m; and

organic solvent,

wherein the joint material is in paste form.

13. The joint material according to claim 12, further comprising:

at least one of silver oxide fine powders with a particle diameter of 1 nm to 200 nm and metallic silver fine powders having organic films formed on their surfaces.

14. The joint material according to claim 12,

wherein the metal powders are single metal powders of silver, gold, copper or nickel or metal powders formed of two or more materials selected from silver, gold, copper and nickel.

15. The joint material according to claim 12,

wherein the metal powders are formed of composite metal powders containing a core material mainly made of any one of copper, aluminum, nickel, silver, tungsten, molybdenum, magnesium and gold and a layer of silver, gold or platinum coated on an outermost surface of the core material.

16. The joint material according to claim 15,

wherein the core material is formed by performing zincate treatment to aluminum or formed of copper, and

a single layer film of silver, a stacked film of nickel and gold or a stacked film of nickel and silver is plated on the surface of the core material.