Semiconductor apparatus, manufacturing method of semiconductor apparatus, and joint material
First Claim
1. A semiconductor apparatus having a structure in which one or more semiconductor parts and one or more conductive members are connected through electric conduction,wherein a bonding layer containing silver is formed at a joint portion between the semiconductor part and the conductive member,holes are formed in the bonding layer so as to be almost evenly dispersed in a whole area of the bonding layer,a volume ratio occupied by the holes in the bonding layer is in a range from 5 vol % to 70 vol %, anda joint structure is formed in which the semiconductor part and the bonding layer, and the joint portion and the conductive member are metallically bonded respectively using silver as a bonding material,wherein silver is the main component of the metallic bond.
3 Assignments
0 Petitions
Accused Products
Abstract
A die bonding portion is metallically bonded by well-conductive Cu metal powders with a maximum particle diameter of about 15 μm to 200 μm and adhesive layers of Ag, and minute holes are evenly dispersed in a joint layer. With this structure, the reflow resistance of about 260° C. and reliability under thermal cycle test can be ensured without using lead.
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Citations
11 Claims
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1. A semiconductor apparatus having a structure in which one or more semiconductor parts and one or more conductive members are connected through electric conduction,
wherein a bonding layer containing silver is formed at a joint portion between the semiconductor part and the conductive member, holes are formed in the bonding layer so as to be almost evenly dispersed in a whole area of the bonding layer, a volume ratio occupied by the holes in the bonding layer is in a range from 5 vol % to 70 vol %, and a joint structure is formed in which the semiconductor part and the bonding layer, and the joint portion and the conductive member are metallically bonded respectively using silver as a bonding material, wherein silver is the main component of the metallic bond.
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9. A semiconductor apparatus having a structure in which one or more semiconductor parts and one or more conductive members are connected through electric conduction,
wherein a bonding layer is formed at a joint portion between the semiconductor part and the conductive member, the bonding layer is formed of high-melting-point and well-conductive metal powders and a silver bonding material for coupling them, and a joint structure is formed in which the semiconductor part and the bonding layer, and the joint portion and the conductive member are metallically bonded respectively with the silver bonding material, wherein silver is the main component of the silver bonding material, wherein a volume ratio occupied by holes in the bonding layer is in a range from 5 vol % to 70 vol %.
Specification