GALLIUM NITRIDE MATERIALS AND METHODS

  • US 20090104758A1
  • Filed: 12/24/2008
  • Published: 04/23/2009
  • Est. Priority Date: 12/14/2000
  • Status: Active Grant
First Claim
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1. A method of producing a semiconductor material comprising:

  • forming a compositionally-graded transition layer over a silicon substrate; and

    forming a gallium nitride material layer over the transition layer.

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