Method for Forming Shielded Gate Field Effect Transistor Using Spacers
First Claim
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1. A method for forming a field effect transistor comprising:
- forming a trench in a semiconductor region;
forming a dielectric layer lining sidewalls and bottom surface of the trench, the dielectric layer being thicker along lower sidewalls and the bottom surface than along upper sidewalls of the trench;
after forming the dielectric layer, filling a lower portion of the trench with a shield electrode;
forming dielectric spacers along the upper trench sidewalls;
after forming the dielectric spacers, forming an inter-electrode dielectric (IED) in the trench over the shield electrode; and
after forming the IED removing the dielectric spacers.
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Abstract
A trench is formed in a semiconductor region. A dielectric layer lining sidewalls and bottom surface of the trench is formed. The dielectric layer is thicker along lower sidewalls and the bottom surface than along upper sidewalls of the trench. After forming the dielectric layer, a lower portion of the trench is filled with a shield electrode. Dielectric spacers are formed along the upper trench sidewalls. After forming the dielectric spacers, an inter-electrode dielectric (IED) is formed in the trench over the shield electrode. After forming the IED, the dielectric spacers are removed.
45 Citations
5 Claims
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1. A method for forming a field effect transistor comprising:
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forming a trench in a semiconductor region; forming a dielectric layer lining sidewalls and bottom surface of the trench, the dielectric layer being thicker along lower sidewalls and the bottom surface than along upper sidewalls of the trench; after forming the dielectric layer, filling a lower portion of the trench with a shield electrode; forming dielectric spacers along the upper trench sidewalls; after forming the dielectric spacers, forming an inter-electrode dielectric (IED) in the trench over the shield electrode; and after forming the IED removing the dielectric spacers. - View Dependent Claims (2, 3, 4, 5)
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Specification