INTRACAVITY UPCONVERSION LASER
First Claim
1. Upconversion laser system comprising at least a semiconductor laser having a gain structure (4, 17) arranged between a first mirror (5, 16) and a second mirror (6), said first (5, 16) and said second mirror (6) forming a laser cavity (7) of the semiconductor laser, and an upconversion laser for upconverting a fundamental radiation of said semiconductor laser,characterized in that said upconversion laser is arranged in the laser cavity (7) of the semiconductor laser.
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Abstract
The present invention relates to an upconversion laser system comprising at least a semiconductor laser having a gain structure (4) arranged between a first mirror (5) and a second mirror (6), said first (5) and said second mirror (6) forming a laser cavity (7) of the semiconductor laser, and an upconversion laser for upconverting a fundamental radiation of said semiconductor laser. The upconversion laser system of the present invention is characterized in that the upconversion laser is arranged in the laser cavity (7) of the semiconductor laser. The proposed upconversion laser system has a compact design.
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11 Claims
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1. Upconversion laser system comprising at least a semiconductor laser having a gain structure (4, 17) arranged between a first mirror (5, 16) and a second mirror (6), said first (5, 16) and said second mirror (6) forming a laser cavity (7) of the semiconductor laser, and an upconversion laser for upconverting a fundamental radiation of said semiconductor laser,
characterized in that said upconversion laser is arranged in the laser cavity (7) of the semiconductor laser.
Specification