SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
First Claim
1. A semiconductor device, comprising:
- a semiconductor substrate comprising an element isolation region;
two gate electrodes formed in substantially parallel on the semiconductor substrate via respective gate insulating films;
two channel regions each formed in regions of the semiconductor substrate under the two gate electrodes;
a source/drain region formed in a region of the semiconductor substrate sandwiching the two channel regions;
a first stress film formed so as to cover the semiconductor substrate and the two gate electrodes; and
a second stress film formed in at least a portion of a void, the void being formed in a region between the two gate electrodes.
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Accused Products
Abstract
A semiconductor device according to one embodiment includes: a semiconductor substrate comprising an element isolation region; two gate electrodes formed in substantially parallel on the semiconductor substrate via respective gate insulating films; two channel regions each formed in regions of the semiconductor substrate under the two gate electrodes; a source/drain region formed in a region of the semiconductor substrate sandwiching the two channel regions; a first stress film formed so as to cover the semiconductor substrate and the two gate electrodes; and a second stress film formed in at least a portion of a void, the void being formed in a region between the two gate electrodes.
11 Citations
20 Claims
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1. A semiconductor device, comprising:
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a semiconductor substrate comprising an element isolation region; two gate electrodes formed in substantially parallel on the semiconductor substrate via respective gate insulating films; two channel regions each formed in regions of the semiconductor substrate under the two gate electrodes; a source/drain region formed in a region of the semiconductor substrate sandwiching the two channel regions; a first stress film formed so as to cover the semiconductor substrate and the two gate electrodes; and a second stress film formed in at least a portion of a void, the void being formed in a region between the two gate electrodes. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of fabricating a semiconductor device, comprising:
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forming two gate electrodes in substantially parallel on a semiconductor substrate via respective gate insulating films; forming a source/drain region in the semiconductor substrate on both sides of the two gate electrodes; forming a first stress film on the semiconductor substrate and the two gate electrodes; forming an interlayer insulating film on the first stress film; forming a contact hole in the first stress film and the interlayer insulating film on the source/drain region so as to penetrate through a void, the void being in the first stress film or the interlayer insulating film in a region between the two gate electrodes; and forming a second stress film in at least a portion of the void via the contact hole. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification