SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

  • US 20090212372A1
  • Filed: 02/20/2009
  • Published: 08/27/2009
  • Est. Priority Date: 02/21/2008
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a semiconductor substrate comprising an element isolation region;

    two gate electrodes formed in substantially parallel on the semiconductor substrate via respective gate insulating films;

    two channel regions each formed in regions of the semiconductor substrate under the two gate electrodes;

    a source/drain region formed in a region of the semiconductor substrate sandwiching the two channel regions;

    a first stress film formed so as to cover the semiconductor substrate and the two gate electrodes; and

    a second stress film formed in at least a portion of a void, the void being formed in a region between the two gate electrodes.

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