METHOD AND SYSTEM FOR XENON FLUORIDE ETCHING WITH ENHANCED EFFICIENCY
First Claim
1. A method for fabricating a microelectromechanical systems device comprising:
- disposing within an etching chamber a substrate comprising an etchable material, anddisposing within the etching chamber a solid etchant, wherein the solid etchant forms a gas-phase etchant capable of etching the etchable material.
2 Assignments
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Accused Products
Abstract
Provided herein is an apparatus and a method useful for manufacturing MEMS devices. An aspect of the disclosed apparatus provides a substrate comprising an etchable material exposed to a solid-state etchant, wherein the substrate and the solid-state etchant are disposed in an etching chamber. In some embodiments, the solid state etchant is moved into close proximity to the substrate. In other embodiments, a configurable partition is between the substrate and the solid-state etchant is opened. The solid-state etchant forms a gas-phase etchant suitable for etching the etchable material. In some preferred embodiments, the solid-state etchant is solid xenon difluoride. The apparatus and method are advantageously used in performing a release etch in the fabrication of optical modulators.
119 Citations
18 Claims
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1. A method for fabricating a microelectromechanical systems device comprising:
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disposing within an etching chamber a substrate comprising an etchable material, and disposing within the etching chamber a solid etchant, wherein the solid etchant forms a gas-phase etchant capable of etching the etchable material. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for fabricating a microelectromechanical systems device comprising:
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disposing a substrate within an etching chamber; extending an etchant module into the etching chamber, wherein a solid etchant is supported on the etchant module, and the solid etchant forms a gas-phase etchant capable of etching a material on the substrate; and allowing the gas-phase etchant to etch the material. - View Dependent Claims (8, 9, 10, 11)
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12. A method for fabricating a microelectromechanical systems device comprising:
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providing solid xenon difluoride within an etch chamber; supporting a substrate comprising an etchable material within the etch chamber; and etching the etchable material from the substrate with a vapor generated by the solid xenon difluoride. - View Dependent Claims (13, 14, 15)
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16. A method for fabricating a microelectromechanical systems device comprising:
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supporting a substrate comprising an etchable material within the etch chamber; and positioning solid xenon difluoride sufficiently proximate to the substrate such that a vapor formed by the solid xenon difluoride etches the etchable material, wherein the substrate and the solid xenon difluoride are less than about 10 cm apart. - View Dependent Claims (17, 18)
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Specification