PRODUCING METHOD OF SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS

• US 20090239386A1
• Filed: 03/16/2009
• Published: 09/24/2009
• Est. Priority Date: 09/19/2003
• Status: Active Grant

• Current Assignee: Kokusai Electric Corp.
• Original Assignee: Jie Wang, Kenichi Suzaki
• Inventors: SUZAKI, Kenichi, Wang, Jie
• Granted Patent: US 8,636,882 B2
• Time in Patent Office: Days
• US Class Current: 438/758
• CPC Class Codes: C23C 16/4401 Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
• CPC Class Codes: C23C 16/4408 by purging residual gases from the reaction chamber or gas lines
• CPC Class Codes: C23C 16/4411 Cooling of the reaction chamber walls C23C16/45572 takes precedence
• CPC Class Codes: C23C 16/463 Cooling of the substrate
• CPC Class Codes: Y10S 414/136 including wafer orienting means
• CPC Class Codes: Y10S 414/137 including means for charging or discharging wafer cassette
• CPC Class Codes: Y10S 414/139 including wafer charging or discharging means for vacuum chamber
• CPC Class Codes: Y10S 438/905 Cleaning of reaction chamber

Abstract

Disclosed is a producing method of a semiconductor device, comprising: loading a substrate into a reaction furnace; forming a film on the substrate in the reaction furnace; unloading the substrate from the reaction furnace after the film has been formed; and forcibly cooling an interior of the reaction furnace in a state where the substrate does not exist in the reaction furnace after the substrate has been unloaded.

Claims

1. A producing method of a semiconductor device, comprising:

loading a substrate into a reaction furnace;

forming a film on the substrate in the reaction furnace;

unloading the substrate from the reaction furnace after the film has been formed; and

forcibly cooling an interior of the reaction furnace, by a forcibly cooling device disposed outside the reaction furnace covering the reaction furnace, in a state where the substrate does not exist in the reaction furnace after the substrate has been unloaded.

2. A producing method of a semiconductor device as recited in claim 1, wherein

the forcibly cooling of the interior of the reaction furnace comprises making cooling medium flow outside the reaction furnace by the forcibly cooling device.

3. A producing method of a semiconductor device as recited in claim 1, wherein

the forcibly cooling of the interior of the reaction furnace comprises making cooling medium flow outside the reaction furnace while exhausting atmosphere gas at high temperature outside the reaction furnace by the forcibly cooling device.

4. A producing method of a semiconductor device as recited in claim 1, wherein

the forcibly cooling of the interior of the reaction furnace comprises rapidly cooling the interior of the reaction furnace by the forcibly cooling device.

5. A producing method of a semiconductor device as recited in claim 1, wherein

the forcibly cooling of the interior of the reaction furnace comprises performing purging in the reaction furnace while forcibly cooling the interior of the reaction furnace by the forcibly cooling device.

6. A producing method of a semiconductor device as recited in claim 1, wherein

the forcibly cooling of the interior of the reaction furnace comprises:

forcibly cooling the interior of the reaction furnace by the forcibly cooling device thereby forcibly generating cracks in a deposited film formed in the reaction furnace; and

performing purging in the reaction furnace thereby discharging particles generated when the cracks are generated out of the reaction furnace.

7. A producing method of a semiconductor device as recited in claim 1, wherein

the forcibly cooling of the interior of the reaction furnace comprises making gas flow in the reaction furnace thereby performing purging in the reaction furnace, while making cooling medium flow outside the reaction furnace by the forcibly cooling device thereby forcibly cooling the interior of the reaction furnace.

8. A producing method of a semiconductor device as recited in claim 1, further comprising cleaning the interior of the reaction furnace.

9. A producing method of a semiconductor device, comprising:

loading a substrate into a reaction furnace;

forming a film on the substrate in the reaction furnace;

unloading the substrate from the reaction furnace after the film has been formed; and

making gas flow in the reaction furnace thereby performing purging in the reaction furnace, while making cooling medium flow outside the reaction furnace thereby forcibly cooling the interior of the reaction furnace, in a state where the substrate does not exist in the reaction furnace after the substrate has been unloaded.

10. A producing method of a semiconductor device, comprising:

loading a substrate into a reaction furnace;

forming a film on the substrate in the reaction furnace;

unloading the substrate from the reaction furnace after the film has been formed;

performing purging in the reaction furnace, while making cooling medium flow outside the reaction furnace by a forcibly cooling device disposed outside the of the reaction furnace, in a state where the substrate does not exist in the reaction furnace after the substrate has been unloaded; and

cleaning the interior of the reaction furnace after repeating the substrate loading, the film forming, the substrate unloading and the purging in the reaction furnace.

11. A producing method of a semiconductor device as recited in claim 10, further comprising repeating the substrate loading, the film forming, the substrate unloading and the purging in the reaction furnace after the cleaning of the interior of the reaction furnace.

12. A substrate processing apparatus, comprising:

a reaction furnace which forms a film on a substrate;

a film-forming gas supply line which supplies film-forming gas into the reaction furnace;

a purge gas supply line which supplies purge gas into the reaction furnace;

an exhaust line which exhausts the reaction furnace;

a transfer device which loads and unloads the substrate to and from the reaction furnace;

a forcibly cooling device which forcibly cools an interior of the reaction furnace and which is disposed outside the reaction furnace covering the reaction furnace, and

a controller which controls the forcibly cooling device such that the forcibly cooling device forcibly cools the interior of the reaction furnace in a state where the substrate does not exist in the reaction furnace after the substrate has been unloaded from the reaction furnace.

13. A substrate processing apparatus as recited in claim 12, wherein

the controller is configured such that the controller controls the forcibly cooling device and the purge gas supply line such that the purge gas supply line supplies the purge gas into the reaction furnace thereby performing purging in the reaction furnace, while the forcibly cooling device forcibly cools the interior of the reaction furnace in a state where the substrate does not exist in the reaction furnace.

14. A substrate processing apparatus as recited in claim 12, wherein

the controller is configured such that the controller controls the forcibly cooling device and the purge gas supply line such that the purge gas supply line makes the purge gas flow in the reaction furnace thereby performing purging in the reaction furnace, while the forcibly cooling device makes cooling medium flow outside the reaction furnace thereby forcibly cooling the interior of the reaction furnace in a state where the substrate does not exist in the reaction furnace.