Producing method of semiconductor device and substrate processing apparatus

• US 8,636,882 B2
• Filed: 03/16/2009
• Issued: 01/28/2014
• Est. Priority Date: 09/19/2003
• Status: Active Grant

• Current Assignee: Kokusai Electric Corp.
• Original Assignee: Hitachi Kokusai Electric Incorporated (Hitachi, Ltd.)
• Inventors: Suzaki, Kenichi, Wang, Jie
• Primary Examiner(s): Menz, Laura
• Assistant Examiner(s): Malek, Maliheh
• Application Number:
  US12/404,915
• Publication Number:
  US 20090239386A1
• Time in Patent Office: 1,779 Days
• Field of Search: 438/38, 438/296, 438/396, 438/585, 438/643, 438/653, 438/655, 438/680, 438/682, 438/685, 438/720, 438/773, 438/775, 438/7, 438/91, 438/794, 438/905, 118718-719, 118724-725, 15634531-34533, 156/345.37, 20429823-29826, 414935-941, 427/248.1, 134 11- 13, 342/80, 342/92, 342/93
• US Class Current: 204/298.23
• CPC Class Codes: C23C 16/4401 Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
• CPC Class Codes: C23C 16/4408 by purging residual gases from the reaction chamber or gas lines
• CPC Class Codes: C23C 16/4411 Cooling of the reaction chamber walls C23C16/45572 takes precedence
• CPC Class Codes: C23C 16/463 Cooling of the substrate
• CPC Class Codes: Y10S 414/136 including wafer orienting means
• CPC Class Codes: Y10S 414/137 including means for charging or discharging wafer cassette
• CPC Class Codes: Y10S 414/139 including wafer charging or discharging means for vacuum chamber
• CPC Class Codes: Y10S 438/905 Cleaning of reaction chamber

Abstract

Disclosed is a producing method of a semiconductor device, comprising: loading a substrate into a reaction furnace; forming a film on the substrate in the reaction furnace; unloading the substrate from the reaction furnace after the film has been formed; and forcibly cooling an interior of the reaction furnace in a state where the substrate does not exist in the reaction furnace after the substrate has been unloaded.

Claims

1. A producing method of a semiconductor device, comprising:

loading a substrate into a reaction furnace;

forming a film on the substrate in the reaction furnace under a predetermined temperature;

unloading the substrate from the reaction furnace after the film has been formed;

increasing temperature inside the reaction furnace to a temperature higher than the predetermined temperature; and

performing purging in the reaction furnace, while contacting a cooling medium directly with an exterior of the reaction furnace by a forcibly cooling device disposed outside the reaction furnace covering the reaction furnace thereby forcibly cooling an interior of the reaction furnace to a temperature lower than half the predetermined temperature, in a state where the substrate does not exist in the reaction furnace after the substrate has been unloaded.

2. A producing method of a semiconductor device as recited in claim 1, wherein

the forcibly cooling of the interior of the reaction furnace comprises making the cooling medium flow outside the reaction furnace by the forcibly cooling device.

3. A producing method of a semiconductor device as recited in claim 1, wherein

the forcibly cooling of the interior of the reaction furnace comprises making the cooling medium flow outside the reaction furnace while exhausting atmosphere gas at high temperature outside the reaction furnace by the forcibly cooling device.

4. A producing method of a semiconductor device as recited in claim 1, wherein

the forcibly cooling of the interior of the reaction furnace comprises making gas flow in the reaction furnace thereby performing purging in the reaction furnace, while making the cooling medium flow outside the reaction furnace by the forcibly cooling device thereby forcibly cooling the interior of the reaction furnace.

5. A producing method of a semiconductor device as recited in claim 1, further comprising:

cleaning the interior of the reaction furnace.

11. A producing method of a semiconductor device as recited in claim 1, wherein

the cooling medium is air or an inert gas.

12. A producing method of a semiconductor device as recited in claim 1, wherein

the cooling medium is air of N₂ gas.

13. A producing method of a semiconductor device as recited in claim 1, wherein

performing purging in the reaction furnace comprises lowering a temperature of the interior of the reaction furnace at a temperature lowering rate of equal to or more than 10°

C./min and equal to or less than 100°

C./min.

14. A producing method of a semiconductor device as recited in claim 1, wherein

performing purging in the reaction furnace comprises lowering a temperature of the interior of the reaction furnace at a temperature lowering rate of equal to or more than 20°

C./min and equal to or less than 100°

C./min.

15. A producing method of a semiconductor device as recited in claim 1, wherein

performing purging in the reaction furnace comprises supplying the purge gas at a flow rate of equal to or more than 10 L/min into the reaction furnace.

16. A producing method of a semiconductor device as recited in claim 1, wherein

performing purging in the reaction furnace comprises supplying the purge gas at a flow rate of equal to or more than 20 L/min into the reaction furnace.

17. A producing method of a semiconductor device as recited in claim 1, wherein

the reaction furnace is a hot wall type reaction furnace.

6. A producing method of a semiconductor device, comprising:

loading a substrate into a reaction furnace;

forming a film on the substrate in the reaction furnace under a predetermined temperature;

unloading the substrate from the reaction furnace after the film has been formed;

increasing temperature inside the reaction furnace to a temperature higher than the predetermined temperature; and

making gas flow in the reaction furnace thereby performing purging in the reaction furnace, while contacting a cooling medium directly with an exterior of the reaction furnace by a forcibly cooling device disposed outside the reaction furnace covering the reaction furnace, thereby forcibly cooling an interior of the reaction furnace to a temperature lower than half the predetermined temperature, in a state where the substrate does not exist in the reaction furnace after the substrate has been unloaded.

7. A producing method of a semiconductor device, comprising:

loading a substrate into a reaction furnace;

forming a film on the substrate in the reaction furnace under a predetermined temperature;

unloading the substrate from the reaction furnace after the film has been formed;

increasing temperature inside the reaction furnace to a temperature higher than the predetermined temperature;

performing purging in the reaction furnace, while contacting a cooling medium directly with an exterior of the reaction furnace by a forcibly cooling device disposed outside the reaction furnace covering the reaction furnace thereby forcibly cooling an interior of the reaction furnace to a temperature lower than half the predetermined temperature, in a state where the substrate does not exist in the reaction furnace after the substrate has been unloaded; and

cleaning the interior of the reaction furnace after repeating the substrate loading, the film forming, the substrate unloading and the purging in the reaction furnace.

8. A producing method of a semiconductor device as recited in claim 7, further comprising:

repeating the substrate loading, the film forming, the substrate unloading and the purging in the reaction furnace after the cleaning of the interior of the reaction furnace.

10. A producing method of a semiconductor device as recited in claim 7, further comprising:

repeating the substrate loading, the film forming, the substrate unloading and the purging in the reaction furnace after cleaning of the interior of the reaction furnace.

9. A producing method of a semiconductor device, comprising:

loading a substrate into a reaction furnace;

forming a film on the substrate in the reaction furnace under a predetermined temperature;

unloading the substrate from the reaction furnace after the film has been formed;

increasing temperature inside the reaction furnace to a temperature higher than the predetermined temperature;

performing purging in the reaction furnace while contacting a cooling medium directly with an exterior of the reaction furnace thereby forcibly cooling an interior of the reaction furnace to a temperature lower than half the predetermined temperature, in a state where the substrate does not exist in the reaction furnace after the substrate has been unloaded; and

cleaning the interior of the reaction furnace after repeating the substrate loading, the file forming, the substrate unloading and the purging in the reaction furnace.