Precursor ink for producing IB-IIIA-VIA semiconductors

• US 20090260670A1
• Filed: 04/18/2008
• Published: 10/22/2009
• Est. Priority Date: 04/18/2008
• Status: Abandoned Application

• Current Assignee: Xiao-Chang Charles Li
• Original Assignee: Xiao-Chang Charles Li
• Inventors: Li, Xiao-Chang Charles
• Application Number:
  US12/148,468
• Publication Number:
  US 20090260670A1
• Time in Patent Office: Days
• US Class Current: 136/244
• CPC Class Codes: C09D 11/02 Printing inks C09D11/30 takes precedence
• CPC Class Codes: H01L 31/0322 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
• CPC Class Codes: Y02E 10/541 CuInSe2 material PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

Copper indium diselenide, copper indium gallium diselenide, and other IB-IIIA-VIA compounds are produced by the liquid deposition on a substrate of a precursor-containing ink, followed by heating to produce the desired material. The precursor containing ink is a mixture of three parts. The first part is plurality of particulates of metal compounds of IB, IIIA. The second part is chalcogen source of selenium, sulfur, or organic chalcogen compounds dissolved in a liquid organic solvent. The third part solution function as viscosity adjustment, as introduction of dopant of sodium ion and/or as ink stabilizer. The precursor ink can be coated on substrate at room temperature and it can be transferred into copper indium (gallium) chalcogenide semiconductor thin film upon baking and a chalcogenization process. The resulting thin film semiconducting material can be incorporated into photovoltaic and other electronic devices.

Claims

1. A precursor ink for printing semiconductor photovoltaic cells comprising:

a plurality of particulates of one or more metal compounds selected from IB, IIB and IIIA

a liquid chalcogen solution

a functional solution

2. A precursor ink for printing semiconductor photovoltaic cells according to claim 1, wherein the metal compounds are oxide, chalcogenide, halide, hydroxide, carboxylic salt, nitrate, sulfonate, triflate of IB, IIB, and IIIA.

3. A precursor ink for printing semiconductor photovoltaic cells according to claim 1, wherein the metal compounds are compounds of copper, zinc, cadmium, indium, gallium, aluminum

4. A precursor ink for printing semiconductor photovoltaic cells according to claim 1, wherein the metal compounds are carboxylic salts with the carbon number less than 33.

5. A precursor ink for printing semiconductor photovoltaic cells according to claim 1, wherein the liquid chalcogen solution is the solution of trioctylphophine dissolved with chalcogen elements of S, Se or Te.

6. A precursor ink for printing semiconductor photovoltaic cells according to claim 1, wherein the liquid chalcogen solution is the solution of trioctylphophine dissolved with organic chalcogen with the formula of R1XR2 and/or R1XXR2, wherein X=S, Se, and R1/R2 are hydrocarbon with carbon number less than 12.

7. A precursor ink for printing semiconductor photovoltaic cells according to claim 1, wherein the functional solution is a solvent or solvent mixture function as viscosity adjustment and is selected from those containing heteroatom of N, P, O and the viscosity is preferably between 500 to 10,000 cp.

8. A precursor ink for printing semiconductor photovoltaic cells according to claim 1, wherein the functional solution is a solvent or solvent mixture function as stabilizing the ink particulates and is selected from those containing heteroatom of N, P, O.

9. A precursor ink for printing semiconductor photovoltaic cells according to claim 1, wherein the functional solution is a solvent or solvent mixture dissolved with a sodium ion dopant and function as a promoter for CIGS crystal growth.

11. A thin film photovoltaic cell in which a semiconducting layer is made as in claims 1 and 12.

12. A thin film photovoltaic cell as in claim 1 in which the semiconducting layer made as in claims 12 is the light-absorbing p layer of the device.

13. A photovoltaic module made up of photovoltaic cells as in claim 11.

10. A method for making a semiconductor film with the general formula Cu(In_aGa_bAl_c)Se_yS_2-y, where 0.7<

a+b+c<

1.3 and 0≦

y≦

2, by the following steps;

a) Selenium, sulfur or both are dissolved in a liquid organic solvent. The chemical composition of this liquid organic solvent includes one or more of the elements phosphorus, sulfur and oxygen.

b) The liquid organic solvent produced in step a) is mixed with a plurality of particulates of metal sources or metal compounds selected from IB, IIB and IIIA.

c) Formulation a precursor ink by mixing a) and b) and a functional solution for adjusting viscosity, increasing ink stability and containing sodium ion to promoting CIGS crystal growth.

d) Apply the precursor ink c) on substrate and followed with a baking process under elevated temperature at vacuum.

e) Chalcogenize the baked film of d) at atmosphere of chalcogen vapor and/or at atmosphere of hydrogen chalcogenide to cause some of the components of the ink produced in step c) and deposited on a substrate in step d) to react and creating the desired polycrystalline semiconductor film.