METAL PIPERIDINATE AND METAL PYRIDINATE PRECURSORS FOR THIN FILM DEPOSITION
First Claim
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1. A method of forming a metal containing layer on a substrate, comprising:
- a) providing a reactor and at least one substrate disposed therein;
b) introducing a precursor-containing vapor into the reactor, wherein the precursor-containing vapor comprises a precursor with one of the following formulas;
M(—
NCR1R2CR3R4CR5R6CR7R8CR9R10—
)xR11y
(I)
M(—
NCR1CR2CR3CR4CR5—
)xR6y
(II)wherein;
M is a metal from the periodic table of elements;
each R is independently selected from among;
H;
C1-C6 alkyls;
C1-C6 alkoxys;
C1-C6 alkylsilyls;
C1-C6 perfluorocarbons;
C1-C6 alkylsiloxys;
C1-C6 alkylaminos;
alkylsilylaminos; and
aminoamido groups; and
x and y are integers, each inclusively ranging between 0 and 6, such that the sum of x and y is equal to the oxidation number of the metal M;
c) maintaining the reactor at a temperature of at least about 100°
C.; and
d) contacting the precursor-containing vapor with at least part of the substrate, and forming a metal containing layer on the substrate through a vapor deposition process.
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Abstract
Methods and compositions for depositing a film on one or more substrates include providing a reactor and at least one substrate disposed in the reactor. At least one lanthanide precursor is provided in vapor form and a lanthanide metal thin film layer is deposited onto the substrate.
20 Citations
15 Claims
-
1. A method of forming a metal containing layer on a substrate, comprising:
-
a) providing a reactor and at least one substrate disposed therein; b) introducing a precursor-containing vapor into the reactor, wherein the precursor-containing vapor comprises a precursor with one of the following formulas;
M(—
NCR1R2CR3R4CR5R6CR7R8CR9R10—
)xR11y
(I)
M(—
NCR1CR2CR3CR4CR5—
)xR6y
(II)wherein; M is a metal from the periodic table of elements; each R is independently selected from among;
H;
C1-C6 alkyls;
C1-C6 alkoxys;
C1-C6 alkylsilyls;
C1-C6 perfluorocarbons;
C1-C6 alkylsiloxys;
C1-C6 alkylaminos;
alkylsilylaminos; and
aminoamido groups; andx and y are integers, each inclusively ranging between 0 and 6, such that the sum of x and y is equal to the oxidation number of the metal M; c) maintaining the reactor at a temperature of at least about 100°
C.; andd) contacting the precursor-containing vapor with at least part of the substrate, and forming a metal containing layer on the substrate through a vapor deposition process. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
-
Specification