Metal piperidinate and metal pyridinate precursors for thin film deposition

• US 8,236,381 B2
• Filed: 08/10/2009
• Issued: 08/07/2012
• Est. Priority Date: 08/08/2008
• Status: Expired due to Fees

• Current Assignee: L'Air Liquide Societe Anonyme Pour L'Etude et L'Exploitation Des Procedes Georges Claude (L'Air Liquide SA)
• Original Assignee: L'Air Liquide Societe Anonyme Pour L'Etude et L'Exploitation Des Procedes Georges Claude (L'Air Liquide SA)
• Inventors: Okubo, Shingo
• Primary Examiner(s): Turocy, David
• Application Number:
  US12/538,513
• Publication Number:
  US 20100034695A1
• Time in Patent Office: 1,093 Days
• Field of Search: 427/248.1, 427/255.28, 427/255.31
• US Class Current: 427/255.31
• CPC Class Codes: C23C 16/18 from metallo-organic compounds
• CPC Class Codes: C23C 16/28 Deposition of only one other non-metal element
• CPC Class Codes: C23C 16/45553 characterized by the use of precursors specially adapted for ALD

Abstract

Methods and compositions for depositing a film on one or more substrates include providing a reactor and at least one substrate disposed in the reactor. At least one lanthanide precursor is provided in vapor form and a lanthanide metal thin film layer is deposited onto the substrate.

Claims

1. A method of forming a metal containing layer on a substrate, comprising:

a) providing a reactor and at least one substrate disposed therein;

b) introducing a precursor-containing vapor into the reactor, wherein the precursor-containing vapor comprises a precursor selected from the group consisting of;

tetrapiperidinogermanium;

di(piperidinato)diethylgermanium;

tetrakispyridinatogermanium;

bis(2,6-dimethylpyridinato)diethylgermanium;

dipiperidinotellurium; and

tripiperidinoantimony;

c) maintaining the reactor at a temperature of at least about 100°

C.; and

d) contacting the precursor-containing vapor with at least part of the substrate, and forming a metal containing layer on the substrate through a vapor deposition process.

2. The method of claim 1, further comprising maintaining the reactor at a temperature between about 100°

C. to about 500°

C.

3. The method of claim 2, further comprising maintaining the reactor at a temperature between about 200°

C. and about 350°

C.

4. The method of claim 1, further comprising maintaining the reactor at a pressure between about 1 Pa and about 10⁵ Pa.

5. The method of claim 4, further comprising maintaining the reactor at a pressure between about 25 Pa and about 10³ Pa.

6. The method of claim 1, further comprising introducing at least one reducing gas into the reactor, wherein the reducing gas comprises at least one member selected from the group consisting of:

H₂, NH₃;

SiH₄;

Si₂H₆;

Si₃H₈;

hydrogen radicals; and

mixtures thereof.

7. The method of claim 6, wherein the reducing gas and the precursor are introduced into the chamber substantially simultaneously, and the chamber is configured for chemical vapor deposition.

8. The method of claim 6, the reducing gas, and the precursor are introduced into the chamber sequentially, and the chamber is configured for atomic layer deposition.

9. The method of claim 1, further comprising introducing at least one oxidizing gas into the reactor, wherein the oxidizing gas comprises at least one member selected from the group consisting of:

O₂;

O₃;

H₂O;

H₂O₂;

NO;

N₂O, oxygen radicals; and

mixtures thereof.

10. The method of claim 9, wherein the precursor and the oxidizing gas are introduced into the chamber substantially simultaneously, and the chamber is configured for chemical vapor deposition.

11. The method of claim 9, wherein the precursor and the oxidizing gas are introduced into the chamber sequentially, and the chamber is configured for atomic layer deposition.

12. The method of claim 1, wherein the metal containing layer on the substrate is a pure metal film, or metallic compound film.