ELECTRONIC DEVICE INCLUDING AN ELECTRICALLY POLLED SUPERLATTICE AND RELATED METHODS
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Abstract
A method for making an electronic device may include forming a selectively polable superlattice comprising a plurality of stacked groups of layers. Each group of layers of the selectively polable superlattice may include a plurality of stacked semiconductor monolayers defining a semiconductor base portion and at least one non-semiconductor monolayer thereon. The at least one non-semiconductor monolayer may be constrained within a crystal lattice of adjacent silicon portions, and at least some semiconductor atoms from opposing base semiconductor portions may be chemically bound together through the at least one non-semiconductor monolayer therebetween. The method may further include coupling at least one electrode to the selectively polable superlattice for selective poling thereof.
27 Citations
50 Claims
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1-27. -27. (canceled)
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28. A electronic device comprising:
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an electrically poled superlattice comprising a plurality of stacked groups of layers; each group of layers of said electrically poled superlattice comprising a plurality of stacked semiconductor monolayers defining a semiconductor base portion and at least one non-semiconductor monolayer thereon; the at least one non-semiconductor monolayer being constrained within a crystal lattice of adjacent silicon portions, and at least some semiconductor atoms from opposing base semiconductor portions being chemically bound together through the at least one non-semiconductor monolayer therebetween; and at least one electrode for selectively changing the poling of said electrically poled superlattice. - View Dependent Claims (29, 30, 31, 32, 33, 34, 35, 36)
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37. A memory device comprising:
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an array of memory cells defining a non-volatile memory, each memory cell comprising an electrically poled superlattice comprising a plurality of stacked groups of layers, each group of layers of said electrically poled superlattice comprising a plurality of stacked semiconductor monolayers defining a semiconductor base portion and at least one non-semiconductor monolayer thereon, the at least one non-semiconductor monolayer being constrained within a crystal lattice of adjacent silicon portions, and at least some semiconductor atoms from opposing base semiconductor portions being chemically bound together through the at least one non-semiconductor monolayer therebetween, and at least one electrode for selectively changing the poling of said electrically poled superlattice. - View Dependent Claims (38, 39, 40, 41)
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42. A method for making an electronic device comprising:
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forming a superlattice comprising a plurality of stacked groups of layers and electrically poling the superlattice; each group of layers of the electrically polled superlattice comprising a plurality of stacked semiconductor monolayers defining a semiconductor base portion and at least one non-semiconductor monolayer thereon; the at least one non-semiconductor monolayer being constrained within a crystal lattice of adjacent silicon portions, and at least some semiconductor atoms from opposing base semiconductor portions being chemically bound together through the at least one non-semiconductor monolayer therebetween; and coupling at least one electrode to the electrically polled superlattice for selective poling thereof. - View Dependent Claims (43, 44, 45, 46, 47, 48, 49, 50)
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Specification