APPARATUS AND METHOD OF IN-SITU IDENTIFICATION FOR CONTAMINATION CONTROL IN SEMICONDUCTOR FABRICATION

• US 20100279438A1
• Filed: 05/01/2009
• Published: 11/04/2010
• Est. Priority Date: 05/01/2009
• Status: Abandoned Application

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Fan, Yang Kai, An, Su Chao, Lin, Bing-Chen, Wan, Chih-Ming
• Application Number:
  US12/434,014
• Publication Number:
  US 20100279438A1
• Time in Patent Office: Days
• US Class Current: 438/14
• CPC Class Codes: H01L 21/67265 of substrates stored in a container, a magazine, a carrier, a boat or the like

Abstract

An apparatus is provided that includes a load port for receiving a container that houses a wafer and a detector disposed proximate the load port such that the detector detects a metal characteristic of the wafer. The detected metal characteristic indicates whether the wafer is at a proper location. Also, provided is a method for use in semiconductor manufacture that includes providing a container that houses a wafer, receiving the container in a load port, detecting a metal characteristic of the wafer, and determining whether the wafer is at a proper location based on the detected metal characteristic of the wafer.

Claims

1. An apparatus, comprising:

a load port for receiving a container that houses a wafer, the load port being associated with a semiconductor processing tool; and

a detector disposed proximate the load port and external to the semiconductor processing tool, the detector being operable to detect a metal characteristic of the wafer, wherein the detected metal characteristic indicates whether the wafer is at a proper location.

2. The apparatus of claim 1, wherein the detector is operable to detect a non-magnetic metal layer disposed on the wafer.

3. The apparatus of claim 2, wherein the non-magnetic metal layer includes one of copper, aluminum, tungsten, tantalum, and titanium.

4. The apparatus of claim 3, wherein the non-magnetic metal layer includes a thickness ranging from about 500 angstrom to about 7000 angstrom.

5. The apparatus of claim 1, wherein the detector is disposed in such a manner that at one point in time the wafer is spaced a distance not greater than 10 cm from the detector when the wafer is being transported from the load port to the semiconductor processing tool.

6. The apparatus of claim 1, wherein the container includes a front opening unified pod (FOUP);

and

wherein the detector is disposed proximate a top portion of the FOUP when the FOUP is received by the load port.

7. The apparatus of claim 6, further comprising another detector operable to detect a metal characteristic of another wafer that is housed in the FOUP, the another detector being disposed proximate a bottom portion of the FOUP when the FOUP is received by the load port.

8. The apparatus of claim 1, wherein the detector is operable to detect a magnetic metal layer disposed on the wafer.

9. A method for use in semiconductor manufacture, comprising:

providing a container that houses a wafer;

receiving the container in a load port;

detecting a metal characteristic of the wafer; and

determining whether the wafer is at a proper location based on the detected metal characteristic of the wafer.

10. The method of claim 9, wherein detecting the metal characteristic includes:

disposing a detector proximate the load port; and

moving the wafer in such a manner that at one point in time the wafer is spaced a distance not greater than 10 cm from the detector.

11. The method of claim 9, wherein detecting the metal characteristic includes detecting a magnetic characteristic of a metal layer disposed on the wafer, the magnetic characteristic indicating whether the metal layer is magnetic or non-magnetic.

12. The method of claim 10, further comprising activating an alarm to indicate that the wafer is not at the proper location if the metal layer is non-magnetic and the load port is operatively coupled to a semiconductor processing tool that is operable to perform a front-end-of-line (FEOL) process.

13. The method of claim 9, further comprising:

moving the wafer from the load port to a semiconductor processing tool; and

processing the wafer in the semiconductor processing tool;

wherein detecting the metal characteristic of the wafer is performed after processing the wafer;

wherein determining whether the wafer is at the proper location includes determining whether the processed wafer is ready for a next semiconductor process.

14. The method of claim 13, wherein detecting the metal characteristic includes:

disposing a detector proximate the semiconductor processing tool; and

moving the processed wafer in such a manner that at one point in time the processed wafer is spaced a distance not greater than 8 cm from the detector.

15. A system, comprising

a load port for receiving a container housing a plurality of wafers;

a semiconductor processing tool for processing the wafers;

a robot for transporting the wafers between the load port and the semiconductor processing tool; and

a detector for detecting a magnetic characteristic of at least one of the wafers as the wafers are being transported, wherein the detected magnetic characteristic indicates whether the at least one of the wafers is at a proper location.

16. The system of claim 15, wherein the detector is disposed proximate the load port in such a manner that at one point in time one of the wafers is spaced a distance not greater than 10 cm from the detector when the one of the wafers is being transported.

17. The system of claim 15, wherein the detector is disposed proximate the semiconductor processing tool in such a manner that at one point in time one of the wafers is spaced a distance not greater than 8 cm from the detector when the wafers are being transported.

18. The system of claim 15, wherein the detected magnetic characteristic includes a non-magnetic characteristic of a metal layer disposed on the at least one of the wafers.

19. The system of claim 18, wherein the non-magnetic metal layer includes a thickness ranging from about 500 angstrom to about 7000 angstrom.

20. The system of claim 18, further comprising an alarm that is activated to indicate that the at least one of the wafers is not at the proper location if the semiconductor processing tool is operable to perform a front-end-of-line (FEOL) process.