SOLID-STATE IMAGING DEVICE AND SEMICONDUCTOR DEVICE

• US 20100309353A1
• Filed: 06/03/2010
• Published: 12/09/2010
• Est. Priority Date: 06/04/2009
• Status: Abandoned Application

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: HAGIWARA, Kenichiro
• Application Number:
  US12/793,034
• Publication Number:
  US 20100309353A1
• Time in Patent Office: Days
• US Class Current: 348/294
• CPC Class Codes: H01L 27/14636 Interconnect structures
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers
• CPC Class Codes: H04N 23/54 Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
• CPC Class Codes: H04N 23/55 Optical parts specially adapted for electronic image sensors; Mounting thereof
• CPC Class Codes: H04N 23/57 Mechanical or electrical details of cameras or camera modules specially adapted for being embedded in other devices

Abstract

According to one embodiment, a solid-state imaging device includes a substrate, a lens, a lens holder, and a metal shield. The substrate includes a pixel region having a first well and has a second well at a periphery thereof, the second well being independent of the first well. The lens is provided above the pixel region in the substrate. The lens holder holds the lens. The metal shield is provided on the substrate and the lens holder and electrically connected to the second well of the substrate

Claims

1. A solid-state imaging device comprising:

a substrate which includes a pixel region having a first well and has a second well at a periphery thereof, the second well being independent of the first well;

a lens which is provided above the pixel region in the substrate;

a lens holder which holds the lens; and

a metal shield which is provided on the substrate and the lens holder and electrically connected to the second well of the substrate.

2. The device according to claim 1, wherein the substrate includes a p-type substrate and an n-type epitaxial layer on the upper surface of the p-type substrate, and

the second well is a p-well formed periphery of the n-type epitaxial layer

3. The device according to claim 1, wherein the substrate and the metal shield are connected via a conductive material.

4. The device according to claim 3, wherein the conductive material is applied to entire side surfaces of the substrate.

5. The device according to claim 1, wherein the substrate and the metal shield are connected directly.

6. The device according to claim 1, wherein the metal shield is provided only on side surfaces of the substrate.

7. The device according to claim 1, wherein the metal shield is formed by depositing a metal.

8. The device according to claim 1, wherein the metal shield is provided on side surfaces and a bottom portion of the substrate.

9. The device according to claim 1, wherein the metal shield is connected to a ground interconnection.

10. A semiconductor device comprising:

a substrate which includes an analog circuit having a first well and has a second well at a periphery thereof, the second well being independent of the first well; and

an external electrode which is provided on the substrate and electrically connected to the second well of the substrate.

11. The device according to claim 10, wherein the substrate includes a p-type substrate and an n-type epitaxial layer on the upper surface of the p-type substrate, and

the second well is a p-well formed periphery of the n-type epitaxial layer

12. The device according to claim 10, wherein the substrate and the external electrode are connected via a conductive material.

13. The device according to claim 12, wherein the conductive material is applied to entire side surfaces of the substrate.

14. The device according to claim 10, wherein the substrate and the external electrode are connected directly.

15. The device according to claim 10, wherein the external electrode is provided only on side surfaces of the substrate.

16. The device according to claim 10, wherein the external electrode is a metal shield, and is formed by depositing a metal.

17. The device according to claim 10, wherein the external electrode is provided on side surfaces and a bottom portion of the substrate.

18. The device according to claim 10, wherein the external electrode is connected to a ground interconnection.