INTEGRATED DEVICE INCORPORATING LOW-VOLTAGE COMPONENTS AND POWER COMPONENTS, AND PROCESS FOR MANUFACTURING SUCH DEVICE

  • US 20110018068A1
  • Filed: 07/20/2010
  • Published: 01/27/2011
  • Est. Priority Date: 07/21/2009
  • Status: Active Grant
First Claim
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1. Integrated device comprising:

  • a semiconductor body having a depressed first portion and second portions projecting from the first portion;

    an STI insulation structure, extending on the first portion of the semiconductor body, laterally delimiting the second portions of the semiconductor body and having a face adjacent to a surface of the first portion of the semiconductor body;

    low-voltage CMOS components, accommodated in the second portions, in a first region of the semiconductor body; and

    a power component, in a second region of the semiconductor body;

    wherein the power component comprises at least one conduction region, formed in the first portion of the semiconductor body, and a conduction contact, connected to the conduction region and crossing the STI insulation structure perpendicularly to the surface of the first portion of the semiconductor body.

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