ORGANIC INVERTER INCLUDING SURFACE-TREATED LAYER AND METHOD OF MANUFACTURING THE SAME

• US 20110033971A1
• Filed: 10/18/2010
• Published: 02/10/2011
• Est. Priority Date: 12/07/2006
• Status: Active Grant

• Current Assignee: Electronics and Telecommunications Research Institute
• Original Assignee: Electronics and Telecommunications Research Institute
• Inventors: SUH, Kyung Soo, KOO, Jae Bon, KIM, Seong Hyun
• Granted Patent: US 8,039,295 B2
• Time in Patent Office: Days
• US Class Current: 438/99
• CPC Class Codes: H10K 10/466 Lateral bottom-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 19/10 comprising field-effect transistors

Abstract

An organic inverter and a method of manufacturing the same are provided, which regulates threshold voltages depending on positions when an inverter circuit is manufactured on a substrate using an organic semiconductor. To form a depletion load transistor and an enhancement driver transistor at adjacent positions of the same substrate, the surface of the substrate is selectively treated by positions or selectively applied by self-assembly monolayer treatment. Thus, a D-inverter having a combination of a depletion mode and an enhancement mode is more easily realized than a conventional method using a transistor size effect. Also, the D-inverter can be realized even with the same W/L ratio, thereby increasing integration density. That is, the W/L ratio does not need to be increased to manufacture a depletion load transistor, thereby improving integration density.

Claims

1. A method of manufacturing an organic inverter, comprising the steps of:

forming a driver transistor including a gate electrode, a driver insulating layer and source and drain electrodes on a substrate;

forming a load transistor including a gate electrode, a load insulating layer and source and drain electrodes on the substrate;

surface-treating one of the driver insulating layer and the load insulating layer; and

forming organic semiconductor layers on the load insulating layer or the driver insulating layer that is surface-treated and the driver insulating layer or the load insulating layer that is not surface-treated, respectively.

2. The method according to claim 1, wherein the surface treatment is performed using a selective mask to selectively treat only the load insulating layer by UV-ozone treatment, O₂ plasma treatment, or laser irradiation.

3. The method according to claim 1, wherein the surface treatment further comprises the steps of:

applying OTS or HMDS onto the entire surface of the substrate to selectively treat the surface of the driver insulating layer with OTS or HMDS; and

removing the OTS or HMDS applied onto the surface of the substrate using a selective surface treatment mask by UV-ozone treatment, O₂ plasma treatment or laser irradiation.

4. The method according to claim 1, wherein the surface treatment is performed using a printing technique to selectively treat the surface of the driver insulating layer with OTS or HMDS.