INTERLAYER INSULATING FILM, WIRING STRUCTURE, AND METHODS OF MANUFACTURING THE SAME

• US 20110127075A1
• Filed: 08/14/2008
• Published: 06/02/2011
• Est. Priority Date: 08/16/2007
• Status: Abandoned Application

• Current Assignee: National University Corporation Chiba University, Tokyo Electron Limited, UBE Industries Limited (UBE Corporation), Ube-Nitto Kasei Company Limited (UBE Corporation)
• Original Assignee: National University Corporation Chiba University, Tokyo Electron Limited, UBE Industries Limited (UBE Corporation), Ube-Nitto Kasei Company Limited (UBE Corporation)
• Inventors: Koike, Tadashi, Inokuchi, Atsutoshi, Watanuki, Kohei, Adachi, Tatsuhiko, Ohmi, Tadahiro, Matsuoka, Takaaki
• Application Number:
  US12/673,543
• Publication Number:
  US 20110127075A1
• Time in Patent Office: Days
• US Class Current: 174/258
• CPC Class Codes: H01L 21/0212 the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/022 the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides adhesion layers or buffer layers H01L21/02304, H01L21/02362
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/02304 formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
• CPC Class Codes: H01L 21/02362 formation of intermediate layers, e.g. capping layers or diffusion barriers
• CPC Class Codes: H01L 21/3121 Layers comprising organo-silicon compounds
• CPC Class Codes: H01L 21/316 composed of oxides or glassy oxides or oxide based glass
• CPC Class Codes: H01L 21/76807 for dual damascene structures
• CPC Class Codes: H01L 21/76819 Smoothing of the dielectric planarisation of insulating materials per se H01L21/31051
• CPC Class Codes: H01L 21/76829 characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
• CPC Class Codes: H01L 21/76832 Multiple layers
• CPC Class Codes: H01L 21/76835 Combinations of two or more different dielectric layers having a low dielectric constant H01L21/76832 takes precedence
• CPC Class Codes: H01L 21/7684 Smoothing; Planarisation
• CPC Class Codes: H01L 21/76897 Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step self-aligned silicidation on field effect transistors H01L29/665
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 23/5329 Insulating materials
• CPC Class Codes: H01L 23/53295 Stacked insulating layers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

An insulative coat film comprising one or two or more kinds of oxides having a dielectric constant (k) of 2.5 or smaller and expressed by a general formula of ((CH₃)_nSiO_2-n/2)_x(SiO₂)_1-x (where n=1 to 3, x≦1) is used to form an interlayer insulation film. The insulative coat film applied by spin-coating is flat without reflecting underlying unevenness, and the heat-treated film has surface roughness of 1 nm or less in Ra and 20 nm or less in a P-V value. The interlayer insulation film containing the insulative coat film can have a wiring structure and an electrode formed only by etching without need of a CMP process.

Claims

1. An interlayer insulating film provided between a lower electrode or wiring layer and an upper wiring layer, said interlayer insulating film including, at least at a part thereof, a coated insulative film having a dielectric constant k of 2.5 or less.

10. An interlayer insulating film according to claim 1, wherein said coated insulative film is a main insulating film.

12. An interlayer insulating film according to claim 1, wherein said coated insulative film has a surface flatness of 1 nm or less in Ra and 20 nm or less in peak-to-valley value.

13. An interlayer insulating film according to claim 1, wherein said coated insulative film contains Si, C, and O so that O>

Si>

1/2C in atomic ratio.

14. An interlayer insulating film according to claim 1, wherein said coated insulative film is a film obtained by drying and baking a liquid coating film containing at least one of a metal organic compound and a metal inorganic compound and a solvent.

15. An interlayer insulating film according to claim 1, wherein said coated insulative film is a film obtained by drying and baking at 600°

C. or less a liquid coating film containing at least one of a metal organic compound and a metal inorganic compound and a solvent.

16. An interlayer insulating film according to claim 1, wherein said coated insulative film is a film obtained by drying and baking at 400°

C. or less a liquid coating film containing at least one of a metal organic compound and a metal inorganic compound and a solvent.

17. An interlayer insulating film according to claim 1, wherein said coated insulative film is an insulator film which has a main skeleton specified by a repetition unit of SiO and which has a composition comprising one kind or two or more kinds of oxides expressed by a general formula of ((CH₃)_nSiO_2-n/2)_x(SiO₂)_1-x (where n=1 to 3 and x≦

1).

18. An interlayer insulating film according to claim 1, wherein said coated insulative film has a nitride surface layer formed by nitriding a surface thereof.

19. A multilayer wiring structure having the interlayer insulating film according to claim 1, said multilayer wiring structure comprising at least one of a via and a trench in said interlayer insulating film, a conductor layer buried in said at least one of said via and said trench, and a barrier layer provided around said conductor layer.

20. A multilayer wiring structure having the interlayer insulating film according to claim 1, wherein said interlayer insulating film includes an insulator film obtained from a coating film comprising one kind or two or more kinds of oxides expressed by a general formula of ((CH₃)_nSiO_2-n/2)_x(SiO₂)_1-x (where n=1 to 3 and x≦

1).

2. An interlayer insulating film provided between a lower electrode or wiring layer and an upper wiring layer, said interlayer insulating film including a fluorocarbon film as a main insulating film, wherein a coated insulative film is provided on said fluorocarbon film.

3. An interlayer insulating film according to claim 2, wherein said fluorocarbon film contains F and C in a range of 0.8 to 1.1 in atomic ratio F/C.

4. An interlayer insulating film according to claim 2, wherein said fluorocarbon film has a dielectric constant k of 1.8 to 2.2.

5. An interlayer insulating film according to claim 2, wherein said fluorocarbon film has a thickness of 50 to 500 nm.

8. An interlayer insulating film according to claim 2, wherein said coated insulative film has a thickness that is ⅓

or less of that of said fluorocarbon film.

9. An interlayer insulating film according to claim 2, wherein said fluorocarbon film is formed by CVD using at least one kind of gas containing C and F in a plasma generated using at least one of an Ar gas, a Xe gas, and a Kr gas.

6-7. -7. (canceled)

11. (canceled)

21-23. -23. (canceled)

24. A method of manufacturing an interlayer insulating film, said method comprising coating a liquid material containing one kind or two or more kinds of oxides expressed by a general formula of ((CH₃)_nSiO_2-n/2)_x(SiO₂)_1-x (where n=1 to 3 and x≦

1) and drying a film thus coated, thereby forming the interlayer insulating film including an insulator film having a dielectric constant k of 2.5 or less.

25. A manufacturing method of forming a multilayer wiring structure including an interlayer insulating film, wherein a step of forming said interlayer insulating film comprises a step of coating a liquid material containing one kind or two or more kinds of oxides expressed by a general formula of ((CH₃)_nSiO_2-n/2)_x(SiO₂)_1-x (where n=1 to 3 and x≦

1) and drying a film thus coated, thereby forming said interlayer insulating film including an insulator film having a dielectric constant k of 2.5 or less.

26. An electronic device including an interlayer insulating film, wherein said interlayer insulating film is an insulator film obtained from a coating film comprising one kind or two or more kinds of oxides expressed by a general formula of ((CH₃)_nSiO_2-n/2)_x(SiO₂)_1-x (where n=1 to 3 and x≦

1).

27. A method of manufacturing an electronic device including an interlayer insulating film, wherein a step of forming said interlayer insulating film comprises a step of coating a liquid material containing one kind or two or more kinds of oxides expressed by a general formula of ((CH₃)_nSiO_2-n/2)_x(SiO₂)_1-x (where n=1 to 3 and x≦

1) and drying a film thus coated, thereby forming said interlayer insulating film including an insulator film having a dielectric constant k of 2.5 or less.