METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

• US 20110215325A1
• Filed: 02/25/2011
• Published: 09/08/2011
• Est. Priority Date: 03/05/2010
• Status: Abandoned Application

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: YAMAZAKI, Shunpei, SUZUKI, Kunihiko
• Application Number:
  US13/034,727
• Publication Number:
  US 20110215325A1
• Time in Patent Office: Days
• US Class Current: 257/57
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 21/02667 Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
• CPC Class Codes: H01L 21/3228 of AIIIBV compounds, e.g. to make them semi-insulating
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H10B 41/30 characterised by the memory core region
• CPC Class Codes: H10B 41/70 the floating gate being an electrode shared by two or more components

Abstract

A highly purified oxide semiconductor layer is formed in such a manner that a substance that firmly bonds during film formation to an impurity containing a hydrogen atom is introduced into a film formation chamber, the substance is reacted with the impurity containing a hydrogen atom remaining in the film formation chamber, and the substance is changed to a stable substance containing the hydrogen atom. The stable substance containing the hydrogen atom is exhausted without providing a metal atom of an oxide semiconductor layer with the hydrogen atom; therefore, a phenomenon in which a hydrogen atom or the like is taken into the oxide semiconductor layer can be prevented. As the substance that firmly bonds to the impurity containing a hydrogen atom, a substance containing a halogen element is preferable, for example.

Claims

1. A method for manufacturing a semiconductor device comprising the step of:

forming an oxide semiconductor layer for a channel formation region of a transistor in a film formation chamber into which a substance containing a halogen element is introduced in a gaseous state.

2. The method for manufacturing the semiconductor device according to claim 1, further comprising the step of performing heat treatment on the oxide semiconductor layer.

3. The method for manufacturing the semiconductor device according to claim 2,

wherein the oxide semiconductor layer is heated at a temperature of greater than or equal to 250°

C. and less than or equal to 700°

C., and

wherein the oxide semiconductor layer is heated in nitrogen, oxygen, or a mixed gas of nitrogen and oxygen atmosphere where a content of hydrogen or water is less than or equal to 10 ppm.

4. The method for manufacturing the semiconductor device according to claim 2, further comprising the step of performing slow cooling on the heated oxide semiconductor layer to a temperature of less than or equal to 200°

C.

5. The method for manufacturing the semiconductor device according to claim 1, wherein the substance containing a halogen element comprises a fluorine atom.

6. The method for manufacturing the semiconductor device according to claim 1, wherein the oxide semiconductor layer is formed by a sputtering method.

7. A method for manufacturing a semiconductor device comprising the steps of:

forming a gate electrode over a substrate;

forming a gate insulating layer over the gate electrode;

forming an oxide semiconductor layer over the gate insulating layer in a film formation chamber into which a substance containing a halogen element is introduced in a gaseous state; and

forming a source electrode and a drain electrode over the oxide semiconductor layer.

8. The method for manufacturing the semiconductor device according to claim 7, further comprising the step of performing heat treatment on the oxide semiconductor layer.

9. The method for manufacturing the semiconductor device according to claim 8,

wherein the oxide semiconductor layer is heated at a temperature of greater than or equal to 250°

C. and less than or equal to 700°

C., and

wherein the oxide semiconductor layer is heated in nitrogen, oxygen, or a mixed gas of nitrogen and oxygen atmosphere where a content of hydrogen or water is less than or equal to 10 ppm.

10. The method for manufacturing the semiconductor device according to claim 8, further comprising the step of performing slow cooling on the heated oxide semiconductor layer to a temperature of less than or equal to 200°

C.

11. The method for manufacturing the semiconductor device according to claim 7, wherein the substance containing a halogen element comprises a fluorine atom.

12. The method for manufacturing the semiconductor device according to claim 7, further comprising the step of forming a first insulating layer that overlaps with a channel formation region of the oxide semiconductor layer and is in contact with a surface of the oxide semiconductor layer.

13. The method for manufacturing the semiconductor device according to claim 7, wherein the oxide semiconductor layer is formed by a sputtering method.

14. A method for manufacturing a semiconductor device comprising the steps of:

forming a source electrode and a drain electrode over a substrate;

forming an oxide semiconductor layer over the source electrode and the drain electrode in a film formation chamber into which a substance containing a halogen element is introduced in a gaseous state;

forming a gate insulating layer over the oxide semiconductor layer; and

forming a gate electrode over the gate insulating layer.

15. The method for manufacturing the semiconductor device according to claim 14, further comprising the step of performing heat treatment on the oxide semiconductor layer.

16. The method for manufacturing the semiconductor device according to claim 15,

wherein the oxide semiconductor layer is heated at a temperature of greater than or equal to 250°

C. and less than or equal to 700°

C., and

wherein the oxide semiconductor layer is heated in nitrogen, oxygen, or a mixed gas of nitrogen and oxygen atmosphere where a content of hydrogen or water is less than or equal to 10 ppm.

17. The method for manufacturing the semiconductor device according to claim 15, further comprising the step of performing slow cooling on the heated oxide semiconductor layer to a temperature of less than or equal to 200°

C.

18. The method for manufacturing the semiconductor device according to claim 14, wherein the substance containing a halogen element comprises a fluorine atom.

19. The method for manufacturing the semiconductor device according to claim 14, wherein the oxide semiconductor layer is formed by a sputtering method.

20. A semiconductor device comprising:

an oxide semiconductor layer comprising a channel formation region of a transistor,

wherein the oxide semiconductor layer comprises a halogen element, and

wherein a concentration of the halogen element is 10¹⁵ atoms/cm³ to 10¹⁸ atoms/cm³ inclusive.

21. The semiconductor device according to claim 20, wherein the halogen element is a fluorine atom.

22. The semiconductor device according to claim 20, wherein the halogen element is a chlorine atom.