FILM FORMING APPARATUS

• US 20110226181A1
• Filed: 03/11/2011
• Published: 09/22/2011
• Est. Priority Date: 03/16/2010
• Status: Abandoned Application

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: YAMAMOTO, Kaoru
• Application Number:
  US13/045,755
• Publication Number:
  US 20110226181A1
• Time in Patent Office: Days
• US Class Current: 118/724
• CPC Class Codes: C23C 16/16 from metal carbonyl compounds
• CPC Class Codes: C23C 16/45517 Confinement of gases to vicinity of substrate
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: H01L 21/28556 by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76873 for electroplating

Abstract

Disclosed is a film forming apparatus to form a thin film on a surface of an object to be processed by using a raw material gas including an organometallic compound includes; a processing container to carry out vacuum exhaustion; a placing table having a heater; and a gas introduction mechanism having a plurality of decomposition promoting gas introduction holes facing the placing table, and raw material gas introduction holes, wherein the decomposition promoting gas introduction holes being disposed while facing the object to be processed on the placing table in order to introduce a decomposition promoting gas to promote decomposition of the raw material gas, and the raw material gas introduction holes being disposed while surrounding a formation area of the plurality of decomposition promoting gas introduction holes in order to introduce the raw material gas.

Claims

1. A film forming apparatus to form a thin film on a surface of an object to be processed by using a raw material gas comprising a raw material of an organometallic compound, the film forming apparatus comprising:

a processing container configured to carry out vacuum exhaustion;

a placing table having a heater configured to dispose the object to be processed thereon; and

a gas introduction mechanism having a plurality of decomposition promoting gas introduction holes facing the placing table, and raw material gas introduction holes, wherein the decomposition promoting gas introduction holes being disposed while facing the object to be processed on the placing table in order to introduce a decomposition promoting gas to promote decomposition of the raw material gas, and the raw material gas introduction holes being disposed while surrounding a formation area of the plurality of decomposition promoting gas introduction holes in order to introduce the raw material gas.

2. The film forming apparatus as claimed in claim 1, wherein the decomposition promoting gas introduction holes are disposed at a position corresponding to an upper side in a perpendicular direction of the object to be processed on the placing table, and the raw material gas introduction holes are disposed at a position corresponding to an upper side in a perpendicular direction of an area further out than an outer peripheral end of the object to be processed on the placing table.

3. The film forming apparatus as claimed in claim 1, wherein the processing container has an inner partition wall within the processing container, wherein the inner partition wall partitions a processing space at an upper side of the placing table in such a manner that the inner partition wall surrounds the processing space, a lower end portion of the inner partition wall is provided in such a manner that the lower end portion approaches the placing table, and a gas outlet is formed between the lower portion and a circumferential periphery of the placing table.

4. The film forming apparatus as claimed in claim 2, wherein the processing container has an inner partition wall within the processing container, wherein the inner partition wall partitions a processing space at an upper side of the placing table in such a manner that the inner partition wall surrounds the processing space, a lower end portion of the inner partition wall is provided in such a manner that the lower end portion approaches the placing table, and a gas outlet is formed between the lower portion and a circumferential periphery of the placing table.

5. The film forming apparatus as claimed in claim 3, wherein an orifice forming member is provided at the lower end portion of the inner partition wall, the orifice forming member extends toward an inner side along a radial direction of the placing table, and an orifice communicating with the gas outlet is formed between the orifice forming member and the circumferential periphery of the placing table.

6. The film forming apparatus as claimed in claim 5, wherein the inner partition wall and the orifice forming member are maintained at a temperature range lower than a decomposition temperature of the raw material gas, and maintained equal to or higher than a solidifying temperature or a liquidizing temperature of the raw material gas.

7. The film forming apparatus as claimed in claim 1, wherein the placing table is configured to be moved up and down.

8. The film forming apparatus as claimed in claim 2, wherein the placing table is configured to be moved up and down.

9. The film forming apparatus as claimed in claim 1, wherein the organometallic compound comprises one material selected from the group consisting Ru₃(CO)₁₂, W(CO)₆, Ni(CO)₄, Mo(CO)₆, CO₂(CO)₈, Rh₄(CO)₁₂, Re₂(CO)₁₀, Cr(CO)₆, Os₃(CO)₁₂, Ta(CO)₅, tetrakis(ethylmethylamino)titanium (TEMAT), TAIMATA, Cu(EDMDD)₂, TaCl₅, trimethyl aluminum (TMA), tertiary-butylimide-tridiethylamide tantalum (TBTDET), pentaethoxy tantalum (PET), tetramethylsilane (TMS), tetrakisethoxy hafnium (TEH), Cp₂Mn[═

Mn(C₅H₅)₂], (MeCp)₂Mn[═

Mn(CH₃C₅H₄)₂], (EtCp)₂Mn[═

Mn(C₂H₅C₅H₄)₂], (i-PrCp)₂Mn[═

Mn(C₃H₇C₅H₄)₂], MeCpMn(CO)₃[═

(CH₃C₅H₄)Mn(CO)₃], (t-BuCp)₂Mn[═

Mn(C₄H₉C₅H₄)₂], CH₃Mn(CO)₅, Mn(DPM)₃[=Mn(C₁₁H₁₉O₂)₃], Mn(DMPD)(EtCp)[=Mn(C₇H₁₁C₂H₅C₅H₄)], Mn(acac)₂[=Mn(C₅H₇O₂)₂], Mn(DPM)₂[=Mn(C₁₁H₁₉O₂)₂], and Mn(acac)₃[=Mn(C₅H₇O₂)₃].

10. The film forming apparatus as claimed in claim 2, wherein the organometallic compound comprises one material selected from the group consisting Ru₃(CO)₁₂, W(CO)₆, Ni(CO)₄, Mo(CO)₆, CO₂(CO)₈, Rh₄(CO)₁₂, Re₂(CO)₁₀, Cr(CO)₆, Os₃(CO)₁₂, Ta(CO)₅, tetrakis(ethylmethylamino)titanium (TEMAT), TAIMATA, Cu(EDMDD)₂, TaCl₅, trimethyl aluminum (TMA), tertiary-butylimide-tridiethylamide tantalum (TBTDET), pentaethoxy tantalum (PET), tetramethylsilane (TMS), tetrakisethoxy hafnium (TEH), Cp₂Mn[═

Mn(C₅H₅)₂], (MeCP)₂Mn[═

Mn(CH₃C₅H₄)₂], (EtCp)₂Mn[═

Mn(C₂H₅C₅H₄)₂], (i-PrCp)₂Mn[═

Mn(C₃H₇C₅H₄)₂], MeCpMn(CO)₃[═

CH₃C₅H₄)Mn(CO)₃], (t-BuCp)₂Mn[═

Mn(C₄H₉C₅H₄)₂], CH₃Mn(CO)₅, Mn(DPM)₃[=Mn(C₁₁H₁₉O₂)₃], Mn(DMPD)(EtCp)[=Mn(C₇H₁₁C₂H₅C₅H₄)], Mn(acac)₂[=Mn(C₅H₇O₂)₂], Mn(DPM)₂[=Mn(C₁₁H₁₉O₂)₂], and Mn(acac)₃[=Mn(C₅H₇O₂)₃].