CURRENT MEASUREMENT METHOD, INSPECTION METHOD OF SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND TEST ELEMENT GROUP

• US 20110254538A1
• Filed: 04/13/2011
• Published: 10/20/2011
• Est. Priority Date: 04/16/2010
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Shionoiri, Yutaka, Kato, Kiyoshi, Sekine, Yusuke, Furutani, Kazuma
• Granted Patent: US 8,552,712 B2
• Time in Patent Office: Days
• US Class Current: 324/76.11
• CPC Class Codes: G01R 19/0092 measuring current only all subgroups of G01R19/00 take precedence
• CPC Class Codes: G01R 31/2601 Apparatus or methods therefor G01R31/2607, G01R31/2642 take precedence

Abstract

One object is to provide a method for measuring current by which minute current can be measured. A value of current flowing through an electrical element is not directly measured but is calculated from change in a potential observed in a predetermined period. The method for measuring current includes the steps of: applying a predetermined potential to a first terminal of an electrical element having the first terminal and a second terminal; measuring an amount of change in a potential of a node connected to the second terminal; and calculating, from the amount of change in the potential, a value of current flowing between the first terminal and the second terminal of the electrical element. Thus, the value of minute current can be measured.

Claims

1. A method for measuring current, comprising the steps of:

applying a first potential to a first terminal of a transistor for evaluation;

applying a second potential to a first terminal of a transistor for injection of charge;

accumulating predetermined charge in a node where a second terminal of the transistor for evaluation and a second terminal of the transistor for injection of charge are connected to each other while the transistor for injection of charge is in an on state;

turning off the transistor for injection of charge;

measuring an amount of change in a potential of the node, due to change in an amount of the charge held in the node; and

calculating a value of current flowing between the first terminal and the second terminal of the transistor for evaluation, from the amount of change in the potential.

2. The method for measuring current according to claim 1, wherein accumulation of predetermined charge in the node and measurement of the amount of change in the potential of the node is repeatedly performed.

3. The method for measuring current according to claim 1, wherein a transistor having L/W (L is a channel length and W is a channel width) larger than that of the transistor for evaluation is used as the transistor for injection of charge.

4. The method for measuring current according to claim 1, wherein a capacitor is connected to the node.

5. A method for inspecting a semiconductor device, wherein whether the transistor for evaluation has predetermined characteristics is inspected with the use of the method for measuring current according to claim 1.

6. A semiconductor device inspected by the method according to claim 5.

7. A semiconductor device, wherein a parameter of a transistor which is a component is determined based on data of the value of the current obtained with the use of the method for measuring current according to claim 1.

8. A test element group comprising:

a transistor for evaluation;

a transistor for injection of charge;

a capacitor; and

an output circuit,

wherein a first terminal of the transistor for evaluation is a terminal to which a first potential is applied,

wherein a first terminal of the transistor for injection of charge is a terminal to which a second potential is applied, and

wherein a second terminal of the transistor for evaluation, a second terminal of the transistor for injection of charge, a first terminal of the capacitor, and an input terminal of the output circuit are connected to one another.

9. The test element group according to claim 8, wherein L/W (L is a channel length and W is a channel width) of the transistor for injection of charge is larger than that of the transistor for evaluation.